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Relaxation of excited surface states of thin Ge-implanted silica films probed by OSEE spectroscopy. / Zatsepin, A. F.; Buntov, E. A.; Mikhailovich, A. P. и др.
в: Journal of Luminescence, Том 169, 01.2016, стр. 143-150.

Результаты исследований: Вклад в журнал › Статья › Рецензирование

Harvard

Zatsepin, AF, Buntov, EA, Mikhailovich, AP, Slesarev, AI, Schmidt, B, von Czarnowski, A & Fitting, H-J 2016, 'Relaxation of excited surface states of thin Ge-implanted silica films probed by OSEE spectroscopy', Journal of Luminescence, Том. 169, стр. 143-150. https://doi.org/10.1016/j.jlumin.2015.08.073

APA

Zatsepin, A. F., Buntov, E. A., Mikhailovich, A. P., Slesarev, A. I., Schmidt, B., von Czarnowski, A., & Fitting, H-J. (2016). Relaxation of excited surface states of thin Ge-implanted silica films probed by OSEE spectroscopy. Journal of Luminescence, 169, 143-150. https://doi.org/10.1016/j.jlumin.2015.08.073

Vancouver

Zatsepin AF, Buntov EA, Mikhailovich AP, Slesarev AI, Schmidt B, von Czarnowski A и др. Relaxation of excited surface states of thin Ge-implanted silica films probed by OSEE spectroscopy. Journal of Luminescence. 2016 янв.;169:143-150. doi: 10.1016/j.jlumin.2015.08.073

Author

Zatsepin, A. F. ; Buntov, E. A. ; Mikhailovich, A. P. и др. / Relaxation of excited surface states of thin Ge-implanted silica films probed by OSEE spectroscopy. в: Journal of Luminescence. 2016 ; Том 169. стр. 143-150.

BibTeX

@article{225b8ffccd6b4943b94b9fe6dd4f61ad,
title = "Relaxation of excited surface states of thin Ge-implanted silica films probed by OSEE spectroscopy",
keywords = "Surface states, Relaxation, Thin films, Ion implantation, Electron emission, Energy structure, ELECTRON-EMISSION, ABSORPTION-EDGE, PHOTOEMISSION, DIOXIDE",
author = "Zatsepin, {A. F.} and Buntov, {E. A.} and Mikhailovich, {A. P.} and Slesarev, {A. I.} and B. Schmidt and {von Czarnowski}, A. and Hans-Joachim Fitting",
year = "2016",
month = jan,
doi = "10.1016/j.jlumin.2015.08.073",
language = "English",
volume = "169",
pages = "143--150",
journal = "Journal of Luminescence",
issn = "0022-2313",
publisher = "Elsevier BV",

}

RIS

TY - JOUR

T1 - Relaxation of excited surface states of thin Ge-implanted silica films probed by OSEE spectroscopy

AU - Zatsepin, A. F.

AU - Buntov, E. A.

AU - Mikhailovich, A. P.

AU - Slesarev, A. I.

AU - Schmidt, B.

AU - von Czarnowski, A.

AU - Fitting, Hans-Joachim

PY - 2016/1

Y1 - 2016/1

KW - Surface states

KW - Relaxation

KW - Thin films

KW - Ion implantation

KW - Electron emission

KW - Energy structure

KW - ELECTRON-EMISSION

KW - ABSORPTION-EDGE

KW - PHOTOEMISSION

KW - DIOXIDE

UR - http://www.scopus.com/inward/record.url?scp=84942465729&partnerID=8YFLogxK

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000365604700022

U2 - 10.1016/j.jlumin.2015.08.073

DO - 10.1016/j.jlumin.2015.08.073

M3 - Article

AN - SCOPUS:84942465729

VL - 169

SP - 143

EP - 150

JO - Journal of Luminescence

JF - Journal of Luminescence

SN - 0022-2313

ER -

ID: 604059