Standard

Quantum Hall effect andnanoheterostructures hopping conductivity in n-InGaAs/InAlAs. / Gudina, S. V.; Arapov, Yu G.; Saveliev, A. P. и др.
в: Semiconductors, Том 50, № 12, 01.12.2016, стр. 1641-1646.

Результаты исследований: Вклад в журнал › Статья › Рецензирование

Harvard

Gudina, SV, Arapov, YG, Saveliev, AP, Neverov, VN, Podgornykh, SM, Shelushinina, NG, Yakunin, MV, Vasil’evskii, IS & Vinichenko, AN 2016, 'Quantum Hall effect andnanoheterostructures hopping conductivity in n-InGaAs/InAlAs', Semiconductors, Том. 50, № 12, стр. 1641-1646. https://doi.org/10.1134/S1063782616120071

APA

Gudina, S. V., Arapov, Y. G., Saveliev, A. P., Neverov, V. N., Podgornykh, S. M., Shelushinina, N. G., Yakunin, M. V., Vasil’evskii, I. S., & Vinichenko, A. N. (2016). Quantum Hall effect andnanoheterostructures hopping conductivity in n-InGaAs/InAlAs. Semiconductors, 50(12), 1641-1646. https://doi.org/10.1134/S1063782616120071

Vancouver

Gudina SV, Arapov YG, Saveliev AP, Neverov VN, Podgornykh SM, Shelushinina NG и др. Quantum Hall effect andnanoheterostructures hopping conductivity in n-InGaAs/InAlAs. Semiconductors. 2016 дек. 1;50(12):1641-1646. doi: 10.1134/S1063782616120071

Author

Gudina, S. V. ; Arapov, Yu G. ; Saveliev, A. P. и др. / Quantum Hall effect andnanoheterostructures hopping conductivity in n-InGaAs/InAlAs. в: Semiconductors. 2016 ; Том 50, № 12. стр. 1641-1646.

BibTeX

@article{f33a9d2e426a4c6eb1a6f8979cf7e3c1,
title = "Quantum Hall effect andnanoheterostructures hopping conductivity in n-InGaAs/InAlAs",
author = "Gudina, {S. V.} and Arapov, {Yu G.} and Saveliev, {A. P.} and Neverov, {V. N.} and Podgornykh, {S. M.} and Shelushinina, {N. G.} and Yakunin, {M. V.} and Vasil{\textquoteright}evskii, {I. S.} and Vinichenko, {A. N.}",
year = "2016",
month = dec,
day = "1",
doi = "10.1134/S1063782616120071",
language = "English",
volume = "50",
pages = "1641--1646",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

RIS

TY - JOUR

T1 - Quantum Hall effect andnanoheterostructures hopping conductivity in n-InGaAs/InAlAs

AU - Gudina, S. V.

AU - Arapov, Yu G.

AU - Saveliev, A. P.

AU - Neverov, V. N.

AU - Podgornykh, S. M.

AU - Shelushinina, N. G.

AU - Yakunin, M. V.

AU - Vasil’evskii, I. S.

AU - Vinichenko, A. N.

PY - 2016/12/1

Y1 - 2016/12/1

UR - http://www.scopus.com/inward/record.url?scp=85010064663&partnerID=8YFLogxK

UR - https://elibrary.ru/item.asp?id=29472788

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000393046100018

U2 - 10.1134/S1063782616120071

DO - 10.1134/S1063782616120071

M3 - Article

AN - SCOPUS:85010064663

VL - 50

SP - 1641

EP - 1646

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 12

ER -

ID: 1462739