Standard

Electronic structure of the Si-C-N amorphous films. / Zatsepin, D. A.; Kurmaev, E. Z.; Moewes, A. и др.
в: Physics of the Solid State, Том 53, № 9, 01.09.2011, стр. 1806-1810.

Результаты исследований: Вклад в журналСтатьяРецензирование

Harvard

Zatsepin, DA, Kurmaev, EZ, Moewes, A & Cholakh, SO 2011, 'Electronic structure of the Si-C-N amorphous films', Physics of the Solid State, Том. 53, № 9, стр. 1806-1810. https://doi.org/10.1134/S1063783411090356

APA

Vancouver

Zatsepin DA, Kurmaev EZ, Moewes A, Cholakh SO. Electronic structure of the Si-C-N amorphous films. Physics of the Solid State. 2011 сент. 1;53(9):1806-1810. doi: 10.1134/S1063783411090356

Author

Zatsepin, D. A. ; Kurmaev, E. Z. ; Moewes, A. и др. / Electronic structure of the Si-C-N amorphous films. в: Physics of the Solid State. 2011 ; Том 53, № 9. стр. 1806-1810.

BibTeX

@article{a7cd1d9ac62149018e9bbeda120c7943,
title = "Electronic structure of the Si-C-N amorphous films",
author = "Zatsepin, {D. A.} and Kurmaev, {E. Z.} and A. Moewes and Cholakh, {S. O.}",
year = "2011",
month = sep,
day = "1",
doi = "10.1134/S1063783411090356",
language = "English",
volume = "53",
pages = "1806--1810",
journal = "Physics of the Solid State",
issn = "1063-7834",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

RIS

TY - JOUR

T1 - Electronic structure of the Si-C-N amorphous films

AU - Zatsepin, D. A.

AU - Kurmaev, E. Z.

AU - Moewes, A.

AU - Cholakh, S. O.

PY - 2011/9/1

Y1 - 2011/9/1

UR - http://www.scopus.com/inward/record.url?scp=80052538244&partnerID=8YFLogxK

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000294810800008

U2 - 10.1134/S1063783411090356

DO - 10.1134/S1063783411090356

M3 - Article

AN - SCOPUS:80052538244

VL - 53

SP - 1806

EP - 1810

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 9

ER -

ID: 8235538