Результаты исследований: Вклад в журнал › Статья › Рецензирование
Результаты исследований: Вклад в журнал › Статья › Рецензирование
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TY - JOUR
T1 - Application of the high-pressure thermoelectric technique for characterization of semiconductor microsamples: PbX-based compounds
AU - Ovsyannikov, Sergey V.
AU - Shchennikov, Vladimir V.
AU - Ponosov, Yuri S.
AU - Gudina, Svetlana V.
AU - Guk, Vera G.
AU - Skipetrov, Eugenii P.
AU - Mogilenskikh, Viktor E.
PY - 2004/4/21
Y1 - 2004/4/21
N2 - In this paper the technique of thermoelectric measurements at high pressure was applied for characterization of semiconductor microsamples based on lead chalcogenide compounds (p-PbSe, n-Pb1-xSnxSe). The Raman scattering technique at ambient pressure was used as an alternative tool for testing of the samples. Raman measurements have revealed broad peaks at 135 and 265 cm-1for PbSe and Pb1-xSnxSe. Analogous spectra were obtained for PbS, and PbTe-based ternary compounds at higher and lower frequencies, respectively. The peaks have been attributed to the first- and second-order Raman modes. From resistivity and thermoelectric power data the linear decrease in the pressure of the NaCl → GeS structural phase transition with increasing Sn content has been established and the thermopower of high-pressure GeS phases have been determined. Thermoelectric properties of the samples at high pressure have shown high sensitivity to a small variation in the composition of the ternary Pb1-xSnxSe compounds, which makes it possible to distinguish semiconductor microsamples whose compositions are very similar.
AB - In this paper the technique of thermoelectric measurements at high pressure was applied for characterization of semiconductor microsamples based on lead chalcogenide compounds (p-PbSe, n-Pb1-xSnxSe). The Raman scattering technique at ambient pressure was used as an alternative tool for testing of the samples. Raman measurements have revealed broad peaks at 135 and 265 cm-1for PbSe and Pb1-xSnxSe. Analogous spectra were obtained for PbS, and PbTe-based ternary compounds at higher and lower frequencies, respectively. The peaks have been attributed to the first- and second-order Raman modes. From resistivity and thermoelectric power data the linear decrease in the pressure of the NaCl → GeS structural phase transition with increasing Sn content has been established and the thermopower of high-pressure GeS phases have been determined. Thermoelectric properties of the samples at high pressure have shown high sensitivity to a small variation in the composition of the ternary Pb1-xSnxSe compounds, which makes it possible to distinguish semiconductor microsamples whose compositions are very similar.
UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000221265900003
UR - http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=2342504018
U2 - 10.1088/0022-3727/37/8/002
DO - 10.1088/0022-3727/37/8/002
M3 - Article
VL - 37
SP - 1151
EP - 1157
JO - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
SN - 0022-3727
IS - 8
ER -
ID: 43761688