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Application of the high-pressure thermoelectric technique for characterization of semiconductor microsamples: PbX-based compounds. / Ovsyannikov, Sergey V.; Shchennikov, Vladimir V.; Ponosov, Yuri S. et al.
In: Journal of Physics D: Applied Physics, Vol. 37, No. 8, 21.04.2004, p. 1151-1157.

Research output: Contribution to journal › Article › peer-review

Harvard

Ovsyannikov, SV, Shchennikov, VV, Ponosov, YS, Gudina, SV, Guk, VG, Skipetrov, EP & Mogilenskikh, VE 2004, 'Application of the high-pressure thermoelectric technique for characterization of semiconductor microsamples: PbX-based compounds', Journal of Physics D: Applied Physics, vol. 37, no. 8, pp. 1151-1157. https://doi.org/10.1088/0022-3727/37/8/002

APA

Ovsyannikov, S. V., Shchennikov, V. V., Ponosov, Y. S., Gudina, S. V., Guk, V. G., Skipetrov, E. P., & Mogilenskikh, V. E. (2004). Application of the high-pressure thermoelectric technique for characterization of semiconductor microsamples: PbX-based compounds. Journal of Physics D: Applied Physics, 37(8), 1151-1157. https://doi.org/10.1088/0022-3727/37/8/002

Vancouver

Ovsyannikov SV, Shchennikov VV, Ponosov YS, Gudina SV, Guk VG, Skipetrov EP et al. Application of the high-pressure thermoelectric technique for characterization of semiconductor microsamples: PbX-based compounds. Journal of Physics D: Applied Physics. 2004 Apr 21;37(8):1151-1157. doi: 10.1088/0022-3727/37/8/002

Author

Ovsyannikov, Sergey V. ; Shchennikov, Vladimir V. ; Ponosov, Yuri S. et al. / Application of the high-pressure thermoelectric technique for characterization of semiconductor microsamples: PbX-based compounds. In: Journal of Physics D: Applied Physics. 2004 ; Vol. 37, No. 8. pp. 1151-1157.

BibTeX

@article{f3c0650f11084e299d9d669f20d2963d,
title = "Application of the high-pressure thermoelectric technique for characterization of semiconductor microsamples: PbX-based compounds",
abstract = "In this paper the technique of thermoelectric measurements at high pressure was applied for characterization of semiconductor microsamples based on lead chalcogenide compounds (p-PbSe, n-Pb1-xSnxSe). The Raman scattering technique at ambient pressure was used as an alternative tool for testing of the samples. Raman measurements have revealed broad peaks at 135 and 265 cm-1for PbSe and Pb1-xSnxSe. Analogous spectra were obtained for PbS, and PbTe-based ternary compounds at higher and lower frequencies, respectively. The peaks have been attributed to the first- and second-order Raman modes. From resistivity and thermoelectric power data the linear decrease in the pressure of the NaCl → GeS structural phase transition with increasing Sn content has been established and the thermopower of high-pressure GeS phases have been determined. Thermoelectric properties of the samples at high pressure have shown high sensitivity to a small variation in the composition of the ternary Pb1-xSnxSe compounds, which makes it possible to distinguish semiconductor microsamples whose compositions are very similar.",
author = "Ovsyannikov, {Sergey V.} and Shchennikov, {Vladimir V.} and Ponosov, {Yuri S.} and Gudina, {Svetlana V.} and Guk, {Vera G.} and Skipetrov, {Eugenii P.} and Mogilenskikh, {Viktor E.}",
year = "2004",
month = apr,
day = "21",
doi = "10.1088/0022-3727/37/8/002",
language = "English",
volume = "37",
pages = "1151--1157",
journal = "Journal of Physics D: Applied Physics",
issn = "0022-3727",
publisher = "Institute of Physics Publishing (IOP)",
number = "8",

}

RIS

TY - JOUR

T1 - Application of the high-pressure thermoelectric technique for characterization of semiconductor microsamples: PbX-based compounds

AU - Ovsyannikov, Sergey V.

AU - Shchennikov, Vladimir V.

AU - Ponosov, Yuri S.

AU - Gudina, Svetlana V.

AU - Guk, Vera G.

AU - Skipetrov, Eugenii P.

AU - Mogilenskikh, Viktor E.

PY - 2004/4/21

Y1 - 2004/4/21

N2 - In this paper the technique of thermoelectric measurements at high pressure was applied for characterization of semiconductor microsamples based on lead chalcogenide compounds (p-PbSe, n-Pb1-xSnxSe). The Raman scattering technique at ambient pressure was used as an alternative tool for testing of the samples. Raman measurements have revealed broad peaks at 135 and 265 cm-1for PbSe and Pb1-xSnxSe. Analogous spectra were obtained for PbS, and PbTe-based ternary compounds at higher and lower frequencies, respectively. The peaks have been attributed to the first- and second-order Raman modes. From resistivity and thermoelectric power data the linear decrease in the pressure of the NaCl → GeS structural phase transition with increasing Sn content has been established and the thermopower of high-pressure GeS phases have been determined. Thermoelectric properties of the samples at high pressure have shown high sensitivity to a small variation in the composition of the ternary Pb1-xSnxSe compounds, which makes it possible to distinguish semiconductor microsamples whose compositions are very similar.

AB - In this paper the technique of thermoelectric measurements at high pressure was applied for characterization of semiconductor microsamples based on lead chalcogenide compounds (p-PbSe, n-Pb1-xSnxSe). The Raman scattering technique at ambient pressure was used as an alternative tool for testing of the samples. Raman measurements have revealed broad peaks at 135 and 265 cm-1for PbSe and Pb1-xSnxSe. Analogous spectra were obtained for PbS, and PbTe-based ternary compounds at higher and lower frequencies, respectively. The peaks have been attributed to the first- and second-order Raman modes. From resistivity and thermoelectric power data the linear decrease in the pressure of the NaCl → GeS structural phase transition with increasing Sn content has been established and the thermopower of high-pressure GeS phases have been determined. Thermoelectric properties of the samples at high pressure have shown high sensitivity to a small variation in the composition of the ternary Pb1-xSnxSe compounds, which makes it possible to distinguish semiconductor microsamples whose compositions are very similar.

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000221265900003

UR - http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=2342504018

U2 - 10.1088/0022-3727/37/8/002

DO - 10.1088/0022-3727/37/8/002

M3 - Article

VL - 37

SP - 1151

EP - 1157

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

IS - 8

ER -

ID: 43761688