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The electronic structure, electronic charge density, optical and thermoelectric properties of Mo and Rh based triple perovskite semiconductors Ba3CaNb2O9 for low-cost energy technologies. / Hassan, Belqees; Irfan, Muhammad; Aslam, Muhammad и др.
в: Optical and Quantum Electronics, Том 56, № 3, 398, 01.03.2024.

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@article{4ea6481e9ba544b28ebfe64a419c8b2b,
title = "The electronic structure, electronic charge density, optical and thermoelectric properties of Mo and Rh based triple perovskite semiconductors Ba3CaNb2O9 for low-cost energy technologies",
abstract = "To improve the performance of materials, we employ first-principles techniques based on density functional theory (DFT) implemented in the Wien 2k code to study perovskites Ba3CaAx2O9. We used the Birch-Murnaghan fit, tolerance factor, and formation energy to determine the structural stability of these materials. Structurally stable compounds Ba3CaAx2O9 have a tolerance factor of 0.7, 1.1, and 0.9, respectively, and a formation energy of −3.04 eV, −1.98, and −1.12 eV. We used the proposed mBJ+U potential to assess the properties of the present materials, providing insight into their nature. Band gaps of 1.5–3.2 eV for Ba3CaAx2O9 (Ax = Nb, Mo, Rh) indicate that they are indirect semiconductors. We also calculate the density of states (DOS) for both materials, and our results for the energies of the band gaps agree with those from the band structure. Absorption and optical conduction are observed to occur in the UV region, and all investigated materials are transparent to low-energy photons. Our investigation into the optical characteristics of these materials suggests they could be promising candidates for application in optoelectronic devices. Finally, the Seebeck coefficient, electrical conductivity, thermal conductivity, power factor, and figure of merit have been calculated to investigate the thermoelectric efficiency of the triple perovskites based on semi-classical Boltzmann theory. The findings suggest that triple perovskites may be a promising candidate for optoelectronic and thermoelectric applications.",
author = "Belqees Hassan and Muhammad Irfan and Muhammad Aslam and Evgeny Buntov",
year = "2024",
month = mar,
day = "1",
doi = "10.1007/s11082-023-06181-x",
language = "English",
volume = "56",
journal = "Optical and Quantum Electronics",
issn = "0306-8919",
publisher = "Kluwer Academic Publishers",
number = "3",

}

RIS

TY - JOUR

T1 - The electronic structure, electronic charge density, optical and thermoelectric properties of Mo and Rh based triple perovskite semiconductors Ba3CaNb2O9 for low-cost energy technologies

AU - Hassan, Belqees

AU - Irfan, Muhammad

AU - Aslam, Muhammad

AU - Buntov, Evgeny

PY - 2024/3/1

Y1 - 2024/3/1

N2 - To improve the performance of materials, we employ first-principles techniques based on density functional theory (DFT) implemented in the Wien 2k code to study perovskites Ba3CaAx2O9. We used the Birch-Murnaghan fit, tolerance factor, and formation energy to determine the structural stability of these materials. Structurally stable compounds Ba3CaAx2O9 have a tolerance factor of 0.7, 1.1, and 0.9, respectively, and a formation energy of −3.04 eV, −1.98, and −1.12 eV. We used the proposed mBJ+U potential to assess the properties of the present materials, providing insight into their nature. Band gaps of 1.5–3.2 eV for Ba3CaAx2O9 (Ax = Nb, Mo, Rh) indicate that they are indirect semiconductors. We also calculate the density of states (DOS) for both materials, and our results for the energies of the band gaps agree with those from the band structure. Absorption and optical conduction are observed to occur in the UV region, and all investigated materials are transparent to low-energy photons. Our investigation into the optical characteristics of these materials suggests they could be promising candidates for application in optoelectronic devices. Finally, the Seebeck coefficient, electrical conductivity, thermal conductivity, power factor, and figure of merit have been calculated to investigate the thermoelectric efficiency of the triple perovskites based on semi-classical Boltzmann theory. The findings suggest that triple perovskites may be a promising candidate for optoelectronic and thermoelectric applications.

AB - To improve the performance of materials, we employ first-principles techniques based on density functional theory (DFT) implemented in the Wien 2k code to study perovskites Ba3CaAx2O9. We used the Birch-Murnaghan fit, tolerance factor, and formation energy to determine the structural stability of these materials. Structurally stable compounds Ba3CaAx2O9 have a tolerance factor of 0.7, 1.1, and 0.9, respectively, and a formation energy of −3.04 eV, −1.98, and −1.12 eV. We used the proposed mBJ+U potential to assess the properties of the present materials, providing insight into their nature. Band gaps of 1.5–3.2 eV for Ba3CaAx2O9 (Ax = Nb, Mo, Rh) indicate that they are indirect semiconductors. We also calculate the density of states (DOS) for both materials, and our results for the energies of the band gaps agree with those from the band structure. Absorption and optical conduction are observed to occur in the UV region, and all investigated materials are transparent to low-energy photons. Our investigation into the optical characteristics of these materials suggests they could be promising candidates for application in optoelectronic devices. Finally, the Seebeck coefficient, electrical conductivity, thermal conductivity, power factor, and figure of merit have been calculated to investigate the thermoelectric efficiency of the triple perovskites based on semi-classical Boltzmann theory. The findings suggest that triple perovskites may be a promising candidate for optoelectronic and thermoelectric applications.

UR - http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=85182841617

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=001147936800001

U2 - 10.1007/s11082-023-06181-x

DO - 10.1007/s11082-023-06181-x

M3 - Article

VL - 56

JO - Optical and Quantum Electronics

JF - Optical and Quantum Electronics

SN - 0306-8919

IS - 3

M1 - 398

ER -

ID: 51653387