Strong electron-phonon coupling and its influence on the transport and optical properties of hole-doped single-layer inse

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Strong electron-phonon coupling and its influence on the transport and optical properties of hole-doped single-layer inse. / Lugovskoi, A. V.; Katsnelson, M. I.; Rudenko, A. N.
в: Physical Review Letters, Том 123, № 17, 176401, 23.10.2019.

Результаты исследований: Вклад в журнал › Статья › Рецензирование

BibTeX

@article{aad08437f77a42c191f7ccdfdf97ed8f,

title = "Strong electron-phonon coupling and its influence on the transport and optical properties of hole-doped single-layer inse",

keywords = "MOBILITY, NANOSHEETS, BEHAVIOR",

author = "Lugovskoi, {A. V.} and Katsnelson, {M. I.} and Rudenko, {A. N.}",

year = "2019",

month = oct,

day = "23",

doi = "10.1103/PhysRevLett.123.176401",

language = "English",

volume = "123",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "17",

}

RIS

TY - JOUR

T1 - Strong electron-phonon coupling and its influence on the transport and optical properties of hole-doped single-layer inse

AU - Lugovskoi, A. V.

AU - Katsnelson, M. I.

AU - Rudenko, A. N.

PY - 2019/10/23

Y1 - 2019/10/23

KW - MOBILITY

KW - NANOSHEETS

KW - BEHAVIOR

UR - http://www.scopus.com/inward/record.url?scp=85074453835&partnerID=8YFLogxK

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000491998300009

U2 - 10.1103/PhysRevLett.123.176401

DO - 10.1103/PhysRevLett.123.176401

M3 - Article

AN - SCOPUS:85074453835

VL - 123

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 17

M1 - 176401

ER -

ID: 11121117