Standard

Stationary character of 2D states in inversion and accumulation layers on zero-gap HgCdTe. / Radantsev, V. F.
в: Semiconductor Science and Technology, Том 8, № 3, 01.03.1993, стр. 394-398.

Результаты исследований: Вклад в журнал › Статья › Рецензирование

Harvard

Radantsev, VF 1993, 'Stationary character of 2D states in inversion and accumulation layers on zero-gap HgCdTe', Semiconductor Science and Technology, Том. 8, № 3, стр. 394-398. https://doi.org/10.1088/0268-1242/8/3/015

APA

Radantsev, V. F. (1993). Stationary character of 2D states in inversion and accumulation layers on zero-gap HgCdTe. Semiconductor Science and Technology, 8(3), 394-398. https://doi.org/10.1088/0268-1242/8/3/015

Vancouver

Radantsev VF. Stationary character of 2D states in inversion and accumulation layers on zero-gap HgCdTe. Semiconductor Science and Technology. 1993 март 1;8(3):394-398. doi: 10.1088/0268-1242/8/3/015

Author

Radantsev, V. F. / Stationary character of 2D states in inversion and accumulation layers on zero-gap HgCdTe. в: Semiconductor Science and Technology. 1993 ; Том 8, № 3. стр. 394-398.

BibTeX

@article{9abb8721eedd4be99169f89fd2294e5d,
title = "Stationary character of 2D states in inversion and accumulation layers on zero-gap HgCdTe",
abstract = "2DEG in inversion and accumulation layers on narrow-gap and gapless ( epsilon g0. The experimental subband parameters are in a very good agreement with theoretical calculations, which ignore the interband tunnelling. The stationary character of 2D states in Kane semiconductors may be understood in the framework of the conception developed for the description of the vacuum condensate of electrons near nuclei with supercritical charge. Even for epsilon g=0 the effective quasi-relativistic potential provides a non-penetrating or a slightly penetrating barrier for 2D states. As a result more than 97% of subband states are true stationary states or are well defined. If the author takes into account the spin polarization terms in the effective potential, all the states turn out to be true stationary states.",
author = "Radantsev, {V. F.}",
year = "1993",
month = mar,
day = "1",
doi = "10.1088/0268-1242/8/3/015",
language = "English",
volume = "8",
pages = "394--398",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "Institute of Physics Publishing (IOP)",
number = "3",

}

RIS

TY - JOUR

T1 - Stationary character of 2D states in inversion and accumulation layers on zero-gap HgCdTe

AU - Radantsev, V. F.

PY - 1993/3/1

Y1 - 1993/3/1

N2 - 2DEG in inversion and accumulation layers on narrow-gap and gapless ( epsilon g0. The experimental subband parameters are in a very good agreement with theoretical calculations, which ignore the interband tunnelling. The stationary character of 2D states in Kane semiconductors may be understood in the framework of the conception developed for the description of the vacuum condensate of electrons near nuclei with supercritical charge. Even for epsilon g=0 the effective quasi-relativistic potential provides a non-penetrating or a slightly penetrating barrier for 2D states. As a result more than 97% of subband states are true stationary states or are well defined. If the author takes into account the spin polarization terms in the effective potential, all the states turn out to be true stationary states.

AB - 2DEG in inversion and accumulation layers on narrow-gap and gapless ( epsilon g0. The experimental subband parameters are in a very good agreement with theoretical calculations, which ignore the interband tunnelling. The stationary character of 2D states in Kane semiconductors may be understood in the framework of the conception developed for the description of the vacuum condensate of electrons near nuclei with supercritical charge. Even for epsilon g=0 the effective quasi-relativistic potential provides a non-penetrating or a slightly penetrating barrier for 2D states. As a result more than 97% of subband states are true stationary states or are well defined. If the author takes into account the spin polarization terms in the effective potential, all the states turn out to be true stationary states.

UR - http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=0027560430

U2 - 10.1088/0268-1242/8/3/015

DO - 10.1088/0268-1242/8/3/015

M3 - Article

VL - 8

SP - 394

EP - 398

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 3

ER -

ID: 55802414