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Simulation of the electronic structure of simple oxides BeO and SiO 2 and complex oxides Be2SiO4 and Be 2SixGe1-xO4 with the phenacite structure. / Mazurenko, V. V.; Rudenko, A. N.; Mazurenko, V. G. и др.
в: Journal of Experimental and Theoretical Physics, Том 112, № 5, 01.05.2011, стр. 877-883.

Результаты исследований: Вклад в журнал › Статья › Рецензирование

Harvard

Mazurenko, VV, Rudenko, AN, Mazurenko, VG, Novoselov, YN, Pustovarov, VA, Kukharenko, AI, Cholakh, SO & Kvashnin, YO 2011, 'Simulation of the electronic structure of simple oxides BeO and SiO 2 and complex oxides Be2SiO4 and Be 2SixGe1-xO4 with the phenacite structure', Journal of Experimental and Theoretical Physics, Том. 112, № 5, стр. 877-883. https://doi.org/10.1134/S1063776111040194

APA

Mazurenko, V. V., Rudenko, A. N., Mazurenko, V. G., Novoselov, Y. N., Pustovarov, V. A., Kukharenko, A. I., Cholakh, S. O., & Kvashnin, Y. O. (2011). Simulation of the electronic structure of simple oxides BeO and SiO 2 and complex oxides Be2SiO4 and Be 2SixGe1-xO4 with the phenacite structure. Journal of Experimental and Theoretical Physics, 112(5), 877-883. https://doi.org/10.1134/S1063776111040194

Vancouver

Mazurenko VV, Rudenko AN, Mazurenko VG, Novoselov YN, Pustovarov VA, Kukharenko AI и др. Simulation of the electronic structure of simple oxides BeO and SiO 2 and complex oxides Be2SiO4 and Be 2SixGe1-xO4 with the phenacite structure. Journal of Experimental and Theoretical Physics. 2011 май 1;112(5):877-883. doi: 10.1134/S1063776111040194

Author

Mazurenko, V. V. ; Rudenko, A. N. ; Mazurenko, V. G. и др. / Simulation of the electronic structure of simple oxides BeO and SiO 2 and complex oxides Be2SiO4 and Be 2SixGe1-xO4 with the phenacite structure. в: Journal of Experimental and Theoretical Physics. 2011 ; Том 112, № 5. стр. 877-883.

BibTeX

@article{e2de9afbc466499494e6011fe89e8962,
title = "Simulation of the electronic structure of simple oxides BeO and SiO 2 and complex oxides Be2SiO4 and Be 2SixGe1-xO4 with the phenacite structure",
author = "Mazurenko, {V. V.} and Rudenko, {A. N.} and Mazurenko, {V. G.} and Novoselov, {Yu N.} and Pustovarov, {V. A.} and Kukharenko, {A. I.} and Cholakh, {S. O.} and Kvashnin, {Y. O.}",
year = "2011",
month = may,
day = "1",
doi = "10.1134/S1063776111040194",
language = "English",
volume = "112",
pages = "877--883",
journal = "Journal of Experimental and Theoretical Physics",
issn = "1063-7761",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

RIS

TY - JOUR

T1 - Simulation of the electronic structure of simple oxides BeO and SiO 2 and complex oxides Be2SiO4 and Be 2SixGe1-xO4 with the phenacite structure

AU - Mazurenko, V. V.

AU - Rudenko, A. N.

AU - Mazurenko, V. G.

AU - Novoselov, Yu N.

AU - Pustovarov, V. A.

AU - Kukharenko, A. I.

AU - Cholakh, S. O.

AU - Kvashnin, Y. O.

PY - 2011/5/1

Y1 - 2011/5/1

UR - http://www.scopus.com/inward/record.url?scp=80051660819&partnerID=8YFLogxK

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000292749500016

U2 - 10.1134/S1063776111040194

DO - 10.1134/S1063776111040194

M3 - Article

AN - SCOPUS:80051660819

VL - 112

SP - 877

EP - 883

JO - Journal of Experimental and Theoretical Physics

JF - Journal of Experimental and Theoretical Physics

SN - 1063-7761

IS - 5

ER -

ID: 8475562