Silicon Whiskers Extraction From Silica by Novel Simple Technology

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Silicon Whiskers Extraction From Silica by Novel Simple Technology. / Kudyakova, Valeriya; Vagizova, Elizaveta M.; Shishkin, Roman.
в: Silicon, Том 15, № 10, 2023, стр. 4335-4343.

Результаты исследований: Вклад в журнал › Статья › Рецензирование

BibTeX

@article{a06852acec2e421f9a712c5ac8279f69,

title = "Silicon Whiskers Extraction From Silica by Novel Simple Technology",

abstract = "The interaction of gaseous AlF with SiO gave Si dendrites and whiskers as a result of the transport chemical reaction of Al, AlF3 and SiO2 starting materials. The reaction yield depends on temperature, transport gas flow-rate, reactor chamber pressure and molar ratio of the initial compounds. The thermodynamic simulation of the processes in reaction chamber was performed by the HSC Chemistry program using HSC-Reaction and HSC-Gibbs modules. Reaction products were characterized by X-ray powder diffraction and scanning electron microscopy. Obtained silicon crystallizes as dendrites and whiskers with diameters ranging from 100 nm to 24 μm. The data obtained demonstrates the potential of the proposed technology for the production of Si anode material. {\textcopyright} 2023, The Author(s), under exclusive licence to Springer Nature B.V.",

author = "Valeriya Kudyakova and Vagizova, {Elizaveta M.} and Roman Shishkin",

note = "Financial support from Council for grants of the President of Russian Federation (grant no. MK—182.2022.1.3) is gratefully acknowledged. Authors also appreciate the support of this work within the government assignment № AAAA-A19-119110190048–7.",

year = "2023",

doi = "10.1007/s12633-023-02338-1",

language = "English",

volume = "15",

pages = "4335--4343",

journal = "Silicon",

issn = "1876-990X",

publisher = "Springer Netherlands",

number = "10",

}

RIS

TY - JOUR

T1 - Silicon Whiskers Extraction From Silica by Novel Simple Technology

AU - Kudyakova, Valeriya

AU - Vagizova, Elizaveta M.

AU - Shishkin, Roman

N1 - Financial support from Council for grants of the President of Russian Federation (grant no. MK—182.2022.1.3) is gratefully acknowledged. Authors also appreciate the support of this work within the government assignment № AAAA-A19-119110190048–7.

PY - 2023

Y1 - 2023

N2 - The interaction of gaseous AlF with SiO gave Si dendrites and whiskers as a result of the transport chemical reaction of Al, AlF3 and SiO2 starting materials. The reaction yield depends on temperature, transport gas flow-rate, reactor chamber pressure and molar ratio of the initial compounds. The thermodynamic simulation of the processes in reaction chamber was performed by the HSC Chemistry program using HSC-Reaction and HSC-Gibbs modules. Reaction products were characterized by X-ray powder diffraction and scanning electron microscopy. Obtained silicon crystallizes as dendrites and whiskers with diameters ranging from 100 nm to 24 μm. The data obtained demonstrates the potential of the proposed technology for the production of Si anode material. © 2023, The Author(s), under exclusive licence to Springer Nature B.V.

AB - The interaction of gaseous AlF with SiO gave Si dendrites and whiskers as a result of the transport chemical reaction of Al, AlF3 and SiO2 starting materials. The reaction yield depends on temperature, transport gas flow-rate, reactor chamber pressure and molar ratio of the initial compounds. The thermodynamic simulation of the processes in reaction chamber was performed by the HSC Chemistry program using HSC-Reaction and HSC-Gibbs modules. Reaction products were characterized by X-ray powder diffraction and scanning electron microscopy. Obtained silicon crystallizes as dendrites and whiskers with diameters ranging from 100 nm to 24 μm. The data obtained demonstrates the potential of the proposed technology for the production of Si anode material. © 2023, The Author(s), under exclusive licence to Springer Nature B.V.

UR - http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=85148651775

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000939360100004

U2 - 10.1007/s12633-023-02338-1

DO - 10.1007/s12633-023-02338-1

M3 - Article

VL - 15

SP - 4335

EP - 4343

JO - Silicon

JF - Silicon

SN - 1876-990X

IS - 10

ER -

ID: 43266107