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Photoluminescence of bulk a-In2Se3 crystals irradiated by high-energy electrons. / Lobanov, A. D.; Sulimov, M. A.; Radzivonchik, D. I. и др.
в: Applied Physics Letters, Том 123, № 26, 262106, 25.12.2023.

Результаты исследований: Вклад в журнал › Статья › Рецензирование

Harvard

Lobanov, AD, Sulimov, MA, Radzivonchik, DI, Sarychev, MN, Ivanov, VY & Kuznetsova, TV 2023, 'Photoluminescence of bulk a-In2Se3 crystals irradiated by high-energy electrons', Applied Physics Letters, Том. 123, № 26, 262106. https://doi.org/10.1063/5.0180807

APA

Lobanov, A. D., Sulimov, M. A., Radzivonchik, D. I., Sarychev, M. N., Ivanov, V. Y., & Kuznetsova, T. V. (2023). Photoluminescence of bulk a-In2Se3 crystals irradiated by high-energy electrons. Applied Physics Letters, 123(26), [262106]. https://doi.org/10.1063/5.0180807

Vancouver

Lobanov AD, Sulimov MA, Radzivonchik DI, Sarychev MN, Ivanov VY, Kuznetsova TV. Photoluminescence of bulk a-In2Se3 crystals irradiated by high-energy electrons. Applied Physics Letters. 2023 дек. 25;123(26):262106. doi: 10.1063/5.0180807

Author

Lobanov, A. D. ; Sulimov, M. A. ; Radzivonchik, D. I. и др. / Photoluminescence of bulk a-In2Se3 crystals irradiated by high-energy electrons. в: Applied Physics Letters. 2023 ; Том 123, № 26.

BibTeX

@article{506d3b0c48574f3e97a5f29366f704f9,
title = "Photoluminescence of bulk a-In2Se3 crystals irradiated by high-energy electrons",
abstract = "The photoluminescence (PL) spectra of bulk α-In2Se3 crystals before and after 10 MeV electrons irradiation with the 1015 and 1017 cm−2 fluences were studied in the temperature range from 7 to 340 K. Three main types of radiative recombinations corresponding to band-to-tail (BT), deep defects, and band-to-band (BB) recombination were manifested in the non-irradiated α-In2Se3 crystals. Also recombinations that can be associated with exciton recombinations at temperatures below 45 K are observed. After electron irradiation, noticeable changes in the PL spectra are observed. We detected a slight increase in activation energy of the BT recombination. An increase in the concentration of deep defects is also noted. The significant decrease in PL intensity of the BB recombinations indicates the formation of non-radiative recombination centers after electron irradiation with the 1017 cm−2 fluence. Our study may be useful for understanding the effects of high-energy electrons irradiation on the performance of electronic and photovoltaic devices based on α-In2Se3.",
author = "Lobanov, {A. D.} and Sulimov, {M. A.} and Radzivonchik, {D. I.} and Sarychev, {M. N.} and Ivanov, {V. Yu.} and Kuznetsova, {T. V.}",
note = "This research was supported by the Russian Science Foundation (Project No. 23-72-00067).",
year = "2023",
month = dec,
day = "25",
doi = "10.1063/5.0180807",
language = "English",
volume = "123",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "26",

}

RIS

TY - JOUR

T1 - Photoluminescence of bulk a-In2Se3 crystals irradiated by high-energy electrons

AU - Lobanov, A. D.

AU - Sulimov, M. A.

AU - Radzivonchik, D. I.

AU - Sarychev, M. N.

AU - Ivanov, V. Yu.

AU - Kuznetsova, T. V.

N1 - This research was supported by the Russian Science Foundation (Project No. 23-72-00067).

PY - 2023/12/25

Y1 - 2023/12/25

N2 - The photoluminescence (PL) spectra of bulk α-In2Se3 crystals before and after 10 MeV electrons irradiation with the 1015 and 1017 cm−2 fluences were studied in the temperature range from 7 to 340 K. Three main types of radiative recombinations corresponding to band-to-tail (BT), deep defects, and band-to-band (BB) recombination were manifested in the non-irradiated α-In2Se3 crystals. Also recombinations that can be associated with exciton recombinations at temperatures below 45 K are observed. After electron irradiation, noticeable changes in the PL spectra are observed. We detected a slight increase in activation energy of the BT recombination. An increase in the concentration of deep defects is also noted. The significant decrease in PL intensity of the BB recombinations indicates the formation of non-radiative recombination centers after electron irradiation with the 1017 cm−2 fluence. Our study may be useful for understanding the effects of high-energy electrons irradiation on the performance of electronic and photovoltaic devices based on α-In2Se3.

AB - The photoluminescence (PL) spectra of bulk α-In2Se3 crystals before and after 10 MeV electrons irradiation with the 1015 and 1017 cm−2 fluences were studied in the temperature range from 7 to 340 K. Three main types of radiative recombinations corresponding to band-to-tail (BT), deep defects, and band-to-band (BB) recombination were manifested in the non-irradiated α-In2Se3 crystals. Also recombinations that can be associated with exciton recombinations at temperatures below 45 K are observed. After electron irradiation, noticeable changes in the PL spectra are observed. We detected a slight increase in activation energy of the BT recombination. An increase in the concentration of deep defects is also noted. The significant decrease in PL intensity of the BB recombinations indicates the formation of non-radiative recombination centers after electron irradiation with the 1017 cm−2 fluence. Our study may be useful for understanding the effects of high-energy electrons irradiation on the performance of electronic and photovoltaic devices based on α-In2Se3.

UR - http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=85181126949

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=001136288000004

U2 - 10.1063/5.0180807

DO - 10.1063/5.0180807

M3 - Article

VL - 123

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 26

M1 - 262106

ER -

ID: 50620325