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Optically stimulated electron emission from surface states of SiO2:Ge films. / Buntov, Evgeny; Zatsepin, Anatoly; Fitting, Hans Joachim и др.
в: Key Engineering Materials, Том 644, 01.01.2015, стр. 49-52.

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Buntov E, Zatsepin A, Fitting HJ, Schmidt B. Optically stimulated electron emission from surface states of SiO2:Ge films. Key Engineering Materials. 2015 янв. 1;644:49-52. doi: 10.4028/www.scientific.net/KEM.644.49

Author

Buntov, Evgeny ; Zatsepin, Anatoly ; Fitting, Hans Joachim и др. / Optically stimulated electron emission from surface states of SiO2:Ge films. в: Key Engineering Materials. 2015 ; Том 644. стр. 49-52.

BibTeX

@article{cb3defe5775d41af961e7423395f84ae,
title = "Optically stimulated electron emission from surface states of SiO2:Ge films",
keywords = "Defects, Electron emission, Ion implantation, Surface states, Thin films",
author = "Evgeny Buntov and Anatoly Zatsepin and Fitting, {Hans Joachim} and Berndt Schmidt",
year = "2015",
month = jan,
day = "1",
doi = "10.4028/www.scientific.net/KEM.644.49",
language = "English",
volume = "644",
pages = "49--52",
journal = "Key Engineering Materials",
issn = "1013-9826",
publisher = "Trans Tech Publications Ltd.",

}

RIS

TY - JOUR

T1 - Optically stimulated electron emission from surface states of SiO2:Ge films

AU - Buntov, Evgeny

AU - Zatsepin, Anatoly

AU - Fitting, Hans Joachim

AU - Schmidt, Berndt

PY - 2015/1/1

Y1 - 2015/1/1

KW - Defects

KW - Electron emission

KW - Ion implantation

KW - Surface states

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=84930166594&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/KEM.644.49

DO - 10.4028/www.scientific.net/KEM.644.49

M3 - Article

AN - SCOPUS:84930166594

VL - 644

SP - 49

EP - 52

JO - Key Engineering Materials

JF - Key Engineering Materials

SN - 1013-9826

ER -

ID: 303841