Standard

Influence of the composition on the electrical properties of amorphous chalcogenides AgGe1+x As1-x S-3. / Kheifets, O. L.; Shakirov, E. F.; Melnikova, N. V. и др.
в: Semiconductors, Том 46, № 7, 07.2012, стр. 943-947.

Результаты исследований: Вклад в журналСтатьяРецензирование

Harvard

APA

Vancouver

Author

BibTeX

@article{c576360379fc44b1a6ee7ea26fa75783,
title = "Influence of the composition on the electrical properties of amorphous chalcogenides AgGe1+x As1-x S-3",
keywords = "IONIC-CONDUCTIVITY",
author = "Kheifets, {O. L.} and Shakirov, {E. F.} and Melnikova, {N. V.} and Filippov, {A. L.} and Nugaeva, {L. L.}",
year = "2012",
month = jul,
doi = "10.1134/S1063782612070123",
language = "English",
volume = "46",
pages = "943--947",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

RIS

TY - JOUR

T1 - Influence of the composition on the electrical properties of amorphous chalcogenides AgGe1+x As1-x S-3

AU - Kheifets, O. L.

AU - Shakirov, E. F.

AU - Melnikova, N. V.

AU - Filippov, A. L.

AU - Nugaeva, L. L.

PY - 2012/7

Y1 - 2012/7

KW - IONIC-CONDUCTIVITY

UR - http://www.scopus.com/inward/record.url?scp=84864121217&partnerID=8YFLogxK

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000306064300016

UR - https://elibrary.ru/item.asp?id=20477913

U2 - 10.1134/S1063782612070123

DO - 10.1134/S1063782612070123

M3 - Article

AN - SCOPUS:84864121217

VL - 46

SP - 943

EP - 947

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 7

ER -

ID: 1079002