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Influence of computational domain size on the pattern formation of the phase field crystals. / Starodumov, Ilya; Galenko, Peter; Alexandrov, Dmitri и др.
в: IOP Conference Series: Materials Science and Engineering, Том 192, № 1, 012008, 19.04.2017.

Результаты исследований: Вклад в журналСтатьяРецензирование

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Starodumov I, Galenko P, Alexandrov D, Kropotin N. Influence of computational domain size on the pattern formation of the phase field crystals. IOP Conference Series: Materials Science and Engineering. 2017 апр. 19;192(1):012008. doi: 10.1088/1757-899X/192/1/012008

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Starodumov, Ilya ; Galenko, Peter ; Alexandrov, Dmitri и др. / Influence of computational domain size on the pattern formation of the phase field crystals. в: IOP Conference Series: Materials Science and Engineering. 2017 ; Том 192, № 1.

BibTeX

@article{9b5cd72874ee466c95ca0fc19d995a72,
title = "Influence of computational domain size on the pattern formation of the phase field crystals",
author = "Ilya Starodumov and Peter Galenko and Dmitri Alexandrov and Nikolai Kropotin",
year = "2017",
month = apr,
day = "19",
doi = "10.1088/1757-899X/192/1/012008",
language = "English",
volume = "192",
journal = "IOP Conference Series: Materials Science and Engineering",
issn = "1757-8981",
publisher = "Institute of Physics Publishing",
number = "1",

}

RIS

TY - JOUR

T1 - Influence of computational domain size on the pattern formation of the phase field crystals

AU - Starodumov, Ilya

AU - Galenko, Peter

AU - Alexandrov, Dmitri

AU - Kropotin, Nikolai

PY - 2017/4/19

Y1 - 2017/4/19

UR - http://www.scopus.com/inward/record.url?scp=85018402288&partnerID=8YFLogxK

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000419285500008

U2 - 10.1088/1757-899X/192/1/012008

DO - 10.1088/1757-899X/192/1/012008

M3 - Article

AN - SCOPUS:85018402288

VL - 192

JO - IOP Conference Series: Materials Science and Engineering

JF - IOP Conference Series: Materials Science and Engineering

SN - 1757-8981

IS - 1

M1 - 012008

ER -

ID: 1817129