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Hall Effect in “size” topological insulators Bi2Se3. / Chistyakov, V. V.; Perevalova, A. N.; Fominykh, В. M. и др.
в: St. Petersburg State Polytechnical University Journal: Physics and Mathematics, Том 16, № 31, 2023, стр. 16-20.

Результаты исследований: Вклад в журнал › Материалы конференции › Рецензирование

Harvard

Chistyakov, VV, Perevalova, AN, Fominykh, ВM, Huang, J-CA & Marchenkov, VV 2023, 'Hall Effect in “size” topological insulators Bi2Se3', St. Petersburg State Polytechnical University Journal: Physics and Mathematics, Том. 16, № 31, стр. 16-20. https://doi.org/10.18721/JPM.163.102

APA

Chistyakov, V. V., Perevalova, A. N., Fominykh, В. M., Huang, J-C. A., & Marchenkov, V. V. (2023). Hall Effect in “size” topological insulators Bi2Se3. St. Petersburg State Polytechnical University Journal: Physics and Mathematics, 16(31), 16-20. https://doi.org/10.18721/JPM.163.102

Vancouver

Chistyakov VV, Perevalova AN, Fominykh ВM, Huang J-CA, Marchenkov VV. Hall Effect in “size” topological insulators Bi2Se3. St. Petersburg State Polytechnical University Journal: Physics and Mathematics. 2023;16(31):16-20. doi: 10.18721/JPM.163.102

Author

Chistyakov, V. V. ; Perevalova, A. N. ; Fominykh, В. M. и др. / Hall Effect in “size” topological insulators Bi2Se3. в: St. Petersburg State Polytechnical University Journal: Physics and Mathematics. 2023 ; Том 16, № 31. стр. 16-20.

BibTeX

@article{e4e881b7e9664a709b4729e9b766f7c0,
title = "Hall Effect in “size” topological insulators Bi2Se3",
abstract = "The Hall resistance ρ of thin films of the Bi2Se3 topological insulator with a thickness from 10 nm to 75 nm at a temperature of 4.2 K and in magnetic fields up to 10 T has been measured. The size effect was found, i.e. dependence of the Hall resistance and the Hall coefficient on the thickness of the studied films. Using a single-band model, the values of the current carrier concentration and their mobility are calculated, which also change with a change in the thickness of the samples. {\textcopyright} 2023 The Author(s).",
author = "Chistyakov, {V. V.} and Perevalova, {A. N.} and Fominykh, {В. M.} and Huang, {Jung-Chun Andrew} and Marchenkov, {V. V.}",
note = "This work was carried out within the state assignment of the Ministry of Education and Science of the Russian Federation (“Spin”, No. 122021000036-3). V.V. Chistyakov, A.N. Perevalova and B.M. Fominykh are grateful to IMP UB RAS for supporting their work on the state task “Spin”, which was carried out within the framework of the youth grant No. m26-22. V.V. Chistyakov and V.V. Marchenkov appreciate the support of the Ural Federal University (Priority-2030 Program).",
year = "2023",
doi = "10.18721/JPM.163.102",
language = "English",
volume = "16",
pages = "16--20",
journal = "St. Petersburg State Polytechnical University Journal: Physics and Mathematics",
issn = "2304-9782",
publisher = "Санкт-Петербургский политехнический университет Петра Великого",
number = "31",

}

RIS

TY - JOUR

T1 - Hall Effect in “size” topological insulators Bi2Se3

AU - Chistyakov, V. V.

AU - Perevalova, A. N.

AU - Fominykh, В. M.

AU - Huang, Jung-Chun Andrew

AU - Marchenkov, V. V.

N1 - This work was carried out within the state assignment of the Ministry of Education and Science of the Russian Federation (“Spin”, No. 122021000036-3). V.V. Chistyakov, A.N. Perevalova and B.M. Fominykh are grateful to IMP UB RAS for supporting their work on the state task “Spin”, which was carried out within the framework of the youth grant No. m26-22. V.V. Chistyakov and V.V. Marchenkov appreciate the support of the Ural Federal University (Priority-2030 Program).

PY - 2023

Y1 - 2023

N2 - The Hall resistance ρ of thin films of the Bi2Se3 topological insulator with a thickness from 10 nm to 75 nm at a temperature of 4.2 K and in magnetic fields up to 10 T has been measured. The size effect was found, i.e. dependence of the Hall resistance and the Hall coefficient on the thickness of the studied films. Using a single-band model, the values of the current carrier concentration and their mobility are calculated, which also change with a change in the thickness of the samples. © 2023 The Author(s).

AB - The Hall resistance ρ of thin films of the Bi2Se3 topological insulator with a thickness from 10 nm to 75 nm at a temperature of 4.2 K and in magnetic fields up to 10 T has been measured. The size effect was found, i.e. dependence of the Hall resistance and the Hall coefficient on the thickness of the studied films. Using a single-band model, the values of the current carrier concentration and their mobility are calculated, which also change with a change in the thickness of the samples. © 2023 The Author(s).

UR - http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=85180790631

UR - https://www.elibrary.ru/item.asp?id=59463310

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=001158169300002

U2 - 10.18721/JPM.163.102

DO - 10.18721/JPM.163.102

M3 - Conference article

VL - 16

SP - 16

EP - 20

JO - St. Petersburg State Polytechnical University Journal: Physics and Mathematics

JF - St. Petersburg State Polytechnical University Journal: Physics and Mathematics

SN - 2304-9782

IS - 31

ER -

ID: 50635997