Standard

Electronic properties of Al, Si‐containing solid solutions based on B1‐TiN, TiC determined by LMTO band structure calculations. / Ivanovsky, A. L.; Medvedeva, N. I.; Shveikin, G. P. и др.
в: physica status solidi (b), Том 195, № 1, 01.05.1996, стр. 195-208.

Результаты исследований: Вклад в журнал › Статья › Рецензирование

Harvard

Ivanovsky, AL, Medvedeva, NI, Shveikin, GP & Zhukovsky, VM 1996, 'Electronic properties of Al, Si‐containing solid solutions based on B1‐TiN, TiC determined by LMTO band structure calculations', physica status solidi (b), Том. 195, № 1, стр. 195-208. https://doi.org/10.1002/pssb.2221950122, https://doi.org/10.1002/pssb.v195:1

APA

Ivanovsky, A. L., Medvedeva, N. I., Shveikin, G. P., & Zhukovsky, V. M. (1996). Electronic properties of Al, Si‐containing solid solutions based on B1‐TiN, TiC determined by LMTO band structure calculations. physica status solidi (b), 195(1), 195-208. https://doi.org/10.1002/pssb.2221950122, https://doi.org/10.1002/pssb.v195:1

Vancouver

Ivanovsky AL, Medvedeva NI, Shveikin GP, Zhukovsky VM. Electronic properties of Al, Si‐containing solid solutions based on B1‐TiN, TiC determined by LMTO band structure calculations. physica status solidi (b). 1996 май 1;195(1):195-208. doi: 10.1002/pssb.2221950122, 10.1002/pssb.v195:1

Author

Ivanovsky, A. L. ; Medvedeva, N. I. ; Shveikin, G. P. и др. / Electronic properties of Al, Si‐containing solid solutions based on B1‐TiN, TiC determined by LMTO band structure calculations. в: physica status solidi (b). 1996 ; Том 195, № 1. стр. 195-208.

BibTeX

@article{60367160d3bb45399395801fc669072b,
title = "Electronic properties of Al, Si‐containing solid solutions based on B1‐TiN, TiC determined by LMTO band structure calculations",
abstract = "The results of nonempirical self-consistent band structure LMTO calculations of the electronic properties of B1-like solid solutions in Ti-Al-N-C and Ti-Si-N-C systems are given. The regularities of changing the electronic and energy parameters of solid solutions as a function of their composition are discussed. Direct Computer modelling of the influence of the possible, mechanisms of solid solution formations (according to Al, Si → C, N or Al, Si → Ti substitution types) on their band structure is carried out. The effect of oxygen impurities and nitrogen lattice vacancies on the electronic properties of the considered solid solutions is discussed taking Ti silicidonitride as an example. The results obtained are compared with recent XPS investigations of metastable B1-TiSixNy(O) films.",
author = "Ivanovsky, {A. L.} and Medvedeva, {N. I.} and Shveikin, {G. P.} and Zhukovsky, {V. M.}",
year = "1996",
month = may,
day = "1",
doi = "10.1002/pssb.2221950122",
language = "English",
volume = "195",
pages = "195--208",
journal = "physica status solidi (b)",
issn = "0370-1972",
publisher = "Wiley-VCH Verlag",
number = "1",

}

RIS

TY - JOUR

T1 - Electronic properties of Al, Si‐containing solid solutions based on B1‐TiN, TiC determined by LMTO band structure calculations

AU - Ivanovsky, A. L.

AU - Medvedeva, N. I.

AU - Shveikin, G. P.

AU - Zhukovsky, V. M.

PY - 1996/5/1

Y1 - 1996/5/1

N2 - The results of nonempirical self-consistent band structure LMTO calculations of the electronic properties of B1-like solid solutions in Ti-Al-N-C and Ti-Si-N-C systems are given. The regularities of changing the electronic and energy parameters of solid solutions as a function of their composition are discussed. Direct Computer modelling of the influence of the possible, mechanisms of solid solution formations (according to Al, Si → C, N or Al, Si → Ti substitution types) on their band structure is carried out. The effect of oxygen impurities and nitrogen lattice vacancies on the electronic properties of the considered solid solutions is discussed taking Ti silicidonitride as an example. The results obtained are compared with recent XPS investigations of metastable B1-TiSixNy(O) films.

AB - The results of nonempirical self-consistent band structure LMTO calculations of the electronic properties of B1-like solid solutions in Ti-Al-N-C and Ti-Si-N-C systems are given. The regularities of changing the electronic and energy parameters of solid solutions as a function of their composition are discussed. Direct Computer modelling of the influence of the possible, mechanisms of solid solution formations (according to Al, Si → C, N or Al, Si → Ti substitution types) on their band structure is carried out. The effect of oxygen impurities and nitrogen lattice vacancies on the electronic properties of the considered solid solutions is discussed taking Ti silicidonitride as an example. The results obtained are compared with recent XPS investigations of metastable B1-TiSixNy(O) films.

UR - http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=0041195522

U2 - 10.1002/pssb.2221950122

DO - 10.1002/pssb.2221950122

M3 - Article

VL - 195

SP - 195

EP - 208

JO - physica status solidi (b)

JF - physica status solidi (b)

SN - 0370-1972

IS - 1

ER -

ID: 55107360