Standard

Electrical properties of the chalcogenides AgGeAsS3xSe3(1−x) (0.1≤x≤0.9). / Kheifets, O. l.; Babushkin, A. n.; Shabashova, O. a. и др.
в: Low Temperature Physics, Том 33, № 2, 01.02.2007, стр. 280-282.

Результаты исследований: Вклад в журнал › Статья › Рецензирование

Harvard

Kheifets, OL, Babushkin, AN, Shabashova, OA & Melnikova, NV 2007, 'Electrical properties of the chalcogenides AgGeAsS3xSe3(1−x) (0.1≤x≤0.9)', Low Temperature Physics, Том. 33, № 2, стр. 280-282. https://doi.org/10.1063/1.2719968

APA

Kheifets, O. L., Babushkin, A. N., Shabashova, O. A., & Melnikova, N. V. (2007). Electrical properties of the chalcogenides AgGeAsS3xSe3(1−x) (0.1≤x≤0.9). Low Temperature Physics, 33(2), 280-282. https://doi.org/10.1063/1.2719968

Vancouver

Kheifets OL, Babushkin AN, Shabashova OA, Melnikova NV. Electrical properties of the chalcogenides AgGeAsS3xSe3(1−x) (0.1≤x≤0.9). Low Temperature Physics. 2007 февр. 1;33(2):280-282. doi: 10.1063/1.2719968

Author

Kheifets, O. l. ; Babushkin, A. n. ; Shabashova, O. a. и др. / Electrical properties of the chalcogenides AgGeAsS3xSe3(1−x) (0.1≤x≤0.9). в: Low Temperature Physics. 2007 ; Том 33, № 2. стр. 280-282.

BibTeX

@article{eb521ae1b41b4409aa5cc0a8c2710b55,
title = "Electrical properties of the chalcogenides AgGeAsS3xSe3(1−x) (0.1≤x≤0.9)",
abstract = "The chalcogenides AgGeAsS3x Se3(1-x) (x=0.9 -0.9) are synthesized and their electrical properties are investigated at low temperatures. The synthesized materials, which are ionic conductors, are studied by the method of impedance spectroscopy. Temperature intervals are found in which the conductivity and dielectric constant of the materials exhibit singular behavior.",
author = "Kheifets, {O. l.} and Babushkin, {A. n.} and Shabashova, {O. a.} and Melnikova, {N. v.}",
note = "These studies were supported in part by the CRDF (Ek-005-00 [X1]), a grant from the CRDF and Ministry of Education of the Russian Federation (BRHE, Post Doctoral Fellowship, award EK-005-X1, annex 7, No 71-05-09), and grant No. 06-02-16492-a from the Russian Foundation for Basic Research.",
year = "2007",
month = feb,
day = "1",
doi = "10.1063/1.2719968",
language = "English",
volume = "33",
pages = "280--282",
journal = "Low Temperature Physics",
issn = "1063-777X",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

RIS

TY - JOUR

T1 - Electrical properties of the chalcogenides AgGeAsS3xSe3(1−x) (0.1≤x≤0.9)

AU - Kheifets, O. l.

AU - Babushkin, A. n.

AU - Shabashova, O. a.

AU - Melnikova, N. v.

N1 - These studies were supported in part by the CRDF (Ek-005-00 [X1]), a grant from the CRDF and Ministry of Education of the Russian Federation (BRHE, Post Doctoral Fellowship, award EK-005-X1, annex 7, No 71-05-09), and grant No. 06-02-16492-a from the Russian Foundation for Basic Research.

PY - 2007/2/1

Y1 - 2007/2/1

N2 - The chalcogenides AgGeAsS3x Se3(1-x) (x=0.9 -0.9) are synthesized and their electrical properties are investigated at low temperatures. The synthesized materials, which are ionic conductors, are studied by the method of impedance spectroscopy. Temperature intervals are found in which the conductivity and dielectric constant of the materials exhibit singular behavior.

AB - The chalcogenides AgGeAsS3x Se3(1-x) (x=0.9 -0.9) are synthesized and their electrical properties are investigated at low temperatures. The synthesized materials, which are ionic conductors, are studied by the method of impedance spectroscopy. Temperature intervals are found in which the conductivity and dielectric constant of the materials exhibit singular behavior.

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000245900300030

UR - http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=34247371897

U2 - 10.1063/1.2719968

DO - 10.1063/1.2719968

M3 - Article

VL - 33

SP - 280

EP - 282

JO - Low Temperature Physics

JF - Low Temperature Physics

SN - 1063-777X

IS - 2

ER -

ID: 41085410