TY - JOUR

T1 - Effect of 10 MeV electron irradiation on the electrical properties of bulk a-In2Se3 crystals

AU - Lobanov, Alexey D.

AU - Korkh, Yulia V.

AU - Patrakov, Evgeny I.

AU - Gaviko, Vasily S.

AU - Sarychev, Maxim N.

AU - Ivanov, Vladimir Yu.

AU - Kuznetsova, Tatyana V.

N1 - Текст о финансировании The research was carried out within the state assignment of the Ministry of Science and Higher Education of the Russian Federation (theme “Spin” No. 122021000036-3). The research was carried out using the equipment of the Collaborative Access Center ≪Testing Center of Nanotechnology and Advanced Materials≫ of the IMP UB RAS. The research funding from the Ministry of Science and Higher Education of the Russian Federation (Ural Federal University Program of Development within the Priority-2030 Program) is gratefully acknowledged.

PY - 2023

Y1 - 2023

N2 - In this work, the effect of 10 MeV electron irradiation on the structure and electrical properties of bulk a-In2Se3 crystals is studied by X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray microanalysis, atomic-force microscopy, and Raman spectroscopy methods. Droplets of 200-500 nm in size were detected on the bulk a-In2Se3 crystal surface. The droplets can be formations with the ?-In2Se3 crystalline phase. The current-voltage characteristics measured by conductive atomic-force microscopy are different on and outside the droplets after electron irradiation. On the droplets, slightly better conductive properties were detected after irradiation with the electron fluence of 1015 cm(-2). It is found that local resistance increases significantly for both on and outside the droplets after irradiation with the electron fluence of 10(17) cm(-2). Our study shows that electron irradiation can contribute to the disappearance of ferroelectric domains in the bulk a-In2Se3 crystals. Also, the distribution of surface potentials measured by Kelvin probe force microscopy becomes more uniform after electron irradiation. The results obtained in the work allow us to calculate the operating time of the device containing a-In2Se3 under conditions of long-term electron irradiation with high-energy electrons. The study shows that a-In2Se3 is a very promising material for applications in the aerospace and nuclear industries.

AB - In this work, the effect of 10 MeV electron irradiation on the structure and electrical properties of bulk a-In2Se3 crystals is studied by X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray microanalysis, atomic-force microscopy, and Raman spectroscopy methods. Droplets of 200-500 nm in size were detected on the bulk a-In2Se3 crystal surface. The droplets can be formations with the ?-In2Se3 crystalline phase. The current-voltage characteristics measured by conductive atomic-force microscopy are different on and outside the droplets after electron irradiation. On the droplets, slightly better conductive properties were detected after irradiation with the electron fluence of 1015 cm(-2). It is found that local resistance increases significantly for both on and outside the droplets after irradiation with the electron fluence of 10(17) cm(-2). Our study shows that electron irradiation can contribute to the disappearance of ferroelectric domains in the bulk a-In2Se3 crystals. Also, the distribution of surface potentials measured by Kelvin probe force microscopy becomes more uniform after electron irradiation. The results obtained in the work allow us to calculate the operating time of the device containing a-In2Se3 under conditions of long-term electron irradiation with high-energy electrons. The study shows that a-In2Se3 is a very promising material for applications in the aerospace and nuclear industries.

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=001070034600001

UR - http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=85172712484

U2 - 10.1039/D3CP03098A

DO - 10.1039/D3CP03098A

M3 - Article

VL - 25

SP - 25772

EP - 25779

JO - Physical Chemistry Chemical Physics

JF - Physical Chemistry Chemical Physics

SN - 1463-9076

IS - 37

ER -