The phenomena of entrapment of liquid and gaseous inclusions in the process of Czochralski pulling of Pb5Ge3O11 and Gd2(MoO4)3 single crystals have been studied experimentally. It is shown that due to the layer mechanism of growth, several modes of entrapment can take place during growth of either compound. The observed phenomena indicate that during layer growth, formation of macrosteps and capture of inclusions occurs prior to cellular growth, and the cell structure is not easily achieved in general. Finally, the mechanism of inclusion capture is entirely determined by the inclination of closely packed planes to the interface.