Bichkov-rashba spin-orbit splitting in kinetic binding regime in HgCdTe accumulation layers

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Bichkov-rashba spin-orbit splitting in kinetic binding regime in HgCdTe accumulation layers. / Radantsev, V. F.; Kruzhaev, V. V.
в: International Journal of Nanoscience, Том 6, № 3-4, 01.06.2007, стр. 301-304.

Результаты исследований: Вклад в журнал › Статья › Рецензирование

BibTeX

@article{9f5144b237d2469d85bd5512442cc225,

title = "Bichkov-rashba spin-orbit splitting in kinetic binding regime in HgCdTe accumulation layers",

keywords = "Landau levels, Magnetocapacitance, Narrow-gap semiconductors, Rashba effect, Spintronics, Surface quantum well",

author = "Radantsev, {V. F.} and Kruzhaev, {V. V.}",

year = "2007",

month = jun,

day = "1",

language = "English",

volume = "6",

pages = "301--304",

journal = "International Journal of Nanoscience",

issn = "0219-581X",

publisher = "World Scientific Publishing Co.",

number = "3-4",

}

RIS

TY - JOUR

T1 - Bichkov-rashba spin-orbit splitting in kinetic binding regime in HgCdTe accumulation layers

AU - Radantsev, V. F.

AU - Kruzhaev, V. V.

PY - 2007/6/1

Y1 - 2007/6/1

KW - Landau levels

KW - Magnetocapacitance

KW - Narrow-gap semiconductors

KW - Rashba effect

KW - Spintronics

KW - Surface quantum well

UR - http://www.scopus.com/inward/record.url?scp=35948945701&partnerID=8YFLogxK

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000255632300027

M3 - Article

AN - SCOPUS:35948945701

VL - 6

SP - 301

EP - 304

JO - International Journal of Nanoscience

JF - International Journal of Nanoscience

SN - 0219-581X

IS - 3-4

ER -

ID: 7210800