Weak localization and intersubband transitions in δ-doped GaAs › Research Explorer

DOI

https://doi.org/10.1134/1.1187618
Final published version

Original language	English
Pages (from-to)	1299-1303
Number of pages	5
Journal	Semiconductors
Volume	32
Issue number	12
DOIs	https://doi.org/10.1134/1.1187618
Publication status	Published - 1 Jan 1998

WoS ResearchAreas Categories

Physics, Condensed Matter

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

ID: 8765337