Weak localization and intersubband transitions in δ-doped GaAs

Standard

Weak localization and intersubband transitions in δ-doped GaAs. / Min'kov, G. M.; Negashev, S. A.; Rut, O. É et al.
In: Semiconductors, Vol. 32, No. 12, 01.01.1998, p. 1299-1303.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{b7dac1f51de24f1fae985a86300f33fd,

title = "Weak localization and intersubband transitions in δ-doped GaAs",

author = "Min'kov, {G. M.} and Negashev, {S. A.} and Rut, {O. {\'E}} and Germanenko, {A. V.} and Valyaev, {V. V.} and Gurtovoǐ, {V. L.}",

year = "1998",

month = jan,

day = "1",

doi = "10.1134/1.1187618",

language = "English",

volume = "32",

pages = "1299--1303",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "American Institute of Physics Publising LLC",

number = "12",

}

RIS

TY - JOUR

T1 - Weak localization and intersubband transitions in δ-doped GaAs

AU - Min'kov, G. M.

AU - Negashev, S. A.

AU - Rut, O. É

AU - Germanenko, A. V.

AU - Valyaev, V. V.

AU - Gurtovoǐ, V. L.

PY - 1998/1/1

Y1 - 1998/1/1

UR - http://www.scopus.com/inward/record.url?scp=0039489487&partnerID=8YFLogxK

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000077764200009

U2 - 10.1134/1.1187618

DO - 10.1134/1.1187618

M3 - Article

AN - SCOPUS:0039489487

VL - 32

SP - 1299

EP - 1303

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 12

ER -

ID: 8765337