Joint effect of temperature and voltage rise rate on the switching process of Si thyristors triggered in impact ionization wave mode

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	115012
Number of pages	10
Journal	Semiconductor Science and Technology
Volume	33
Issue number	11
DOIs	https://doi.org/10.1088/1361-6641/aae1f0
Publication status	Published - Nov 2018

high-power semiconductor switches, impact-ionization front, triggering voltage rise rate, subnanosecond switching process, CLOSING SWITCH, SILICON, FRONTS, PULSE, SEMICONDUCTORS, BREAKDOWN, ELECTRON, CENTERS, DEVICES, DIODES

ID: 8156696