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Joint effect of temperature and voltage rise rate on the switching process of Si thyristors triggered in impact ionization wave mode. / Gusev, Anton; Rukin, Sergei; Tsyranov, Sergei et al.
In: Semiconductor Science and Technology, Vol. 33, No. 11, 115012, 11.2018.

Research output: Contribution to journal › Article › peer-review

Harvard

Gusev, A, Rukin, S, Tsyranov, S, Perminova, O, Lyubutin, S & Slovikovsky, B 2018, 'Joint effect of temperature and voltage rise rate on the switching process of Si thyristors triggered in impact ionization wave mode', Semiconductor Science and Technology, vol. 33, no. 11, 115012. https://doi.org/10.1088/1361-6641/aae1f0

APA

Gusev, A., Rukin, S., Tsyranov, S., Perminova, O., Lyubutin, S., & Slovikovsky, B. (2018). Joint effect of temperature and voltage rise rate on the switching process of Si thyristors triggered in impact ionization wave mode. Semiconductor Science and Technology, 33(11), [115012]. https://doi.org/10.1088/1361-6641/aae1f0

Vancouver

Gusev A, Rukin S, Tsyranov S, Perminova O, Lyubutin S, Slovikovsky B. Joint effect of temperature and voltage rise rate on the switching process of Si thyristors triggered in impact ionization wave mode. Semiconductor Science and Technology. 2018 Nov;33(11):115012. doi: 10.1088/1361-6641/aae1f0

Author

Gusev, Anton ; Rukin, Sergei ; Tsyranov, Sergei et al. / Joint effect of temperature and voltage rise rate on the switching process of Si thyristors triggered in impact ionization wave mode. In: Semiconductor Science and Technology. 2018 ; Vol. 33, No. 11.

BibTeX

@article{2965c2f91e3c420793aa2a5019443cb4,
title = "Joint effect of temperature and voltage rise rate on the switching process of Si thyristors triggered in impact ionization wave mode",
keywords = "high-power semiconductor switches, impact-ionization front, triggering voltage rise rate, subnanosecond switching process, CLOSING SWITCH, SILICON, FRONTS, PULSE, SEMICONDUCTORS, BREAKDOWN, ELECTRON, CENTERS, DEVICES, DIODES",
author = "Anton Gusev and Sergei Rukin and Sergei Tsyranov and Olga Perminova and Sergei Lyubutin and Boris Slovikovsky",
year = "2018",
month = nov,
doi = "10.1088/1361-6641/aae1f0",
language = "English",
volume = "33",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "Institute of Physics Publishing (IOP)",
number = "11",

}

RIS

TY - JOUR

T1 - Joint effect of temperature and voltage rise rate on the switching process of Si thyristors triggered in impact ionization wave mode

AU - Gusev, Anton

AU - Rukin, Sergei

AU - Tsyranov, Sergei

AU - Perminova, Olga

AU - Lyubutin, Sergei

AU - Slovikovsky, Boris

PY - 2018/11

Y1 - 2018/11

KW - high-power semiconductor switches

KW - impact-ionization front

KW - triggering voltage rise rate

KW - subnanosecond switching process

KW - CLOSING SWITCH

KW - SILICON

KW - FRONTS

KW - PULSE

KW - SEMICONDUCTORS

KW - BREAKDOWN

KW - ELECTRON

KW - CENTERS

KW - DEVICES

KW - DIODES

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000447162100002

UR - https://www.scopus.com/inward/record.uri?eid=2-s2.0-85055340898&doi=10.1088%2f1361-6641%2faae1f0&partnerID=40&md5=eac685026220cb4e28ab99d0b801ddc9

UR - https://elibrary.ru/item.asp?id=38649482

U2 - 10.1088/1361-6641/aae1f0

DO - 10.1088/1361-6641/aae1f0

M3 - Article

VL - 33

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 11

M1 - 115012

ER -

ID: 8156696