FIELD: chemistry.
SUBSTANCE: tin ion-implanted silicon oxide film on a silicon substrate includes alpha-tin nanoclusters. The film has thickness of 80-350 nm, average tin concentration in the range of 2.16 to 7.1 at % and the alpha-tin nanoclusters have a radius of 1.5 to 4 nm.
EFFECT: film has higher intensity and a short photoluminescence bandwidth.