1 - 10 out of 24Page size: 10
  1. 2013

  2. Strong magnetic field effect on over-the-barrier transport in Pb-p-Hg1-xCdxTe Schottky barriers

    Radantsev, V. F. & Zavyalov, V. V., Mar 2013, In: Semiconductor Science and Technology. 28, 3, 10 p., 035004.

    Research output: Contribution to journal › Article › peer-review

  3. 2010

  4. Electrical and morphological properties of CdTe films synthesized by the method of molecular deposition

    Mayorov, V. A., Yafaysov, A. M., Bogevolnov, V. B. & Radanstev, V. F., 2010, In: Semiconductors. 44, 5, p. 564-567 4 p.

    Research output: Contribution to journal › Article › peer-review

  5. 2007

  6. Bichkov-rashba spin-orbit splitting in kinetic binding regime in HgCdTe accumulation layers

    Radantsev, V. F. & Kruzhaev, V. V., 1 Jun 2007, In: International Journal of Nanoscience. 6, 3-4, p. 301-304 4 p.

    Research output: Contribution to journal › Article › peer-review

  7. 2006

  8. Rashba splitting of kinetically bound states in gated HgCdTe surface quantum wells

    Radantsev, V. F. & Kruzhaev, V. V., 1 Aug 2006, In: Physica E: Low-Dimensional Systems and Nanostructures. 34, 1-2, p. 340-343 4 p.

    Research output: Contribution to journal › Article › peer-review

  9. 2004

  10. Kinetic confinement and zero-electric-field binding in HgCdTe accumulation layers

    Radantsev, V. F., Kruzhaev, V. V. & Kulaev, G. I., 30 Nov 2004, In: International Journal of Modern Physics B. 18, 27-29, p. 3637-3640 4 p.

    Research output: Contribution to journal › Article › peer-review

  11. Rashba polarization in HgCdTe inversion layers at large depletion charges

    Radantsev, V. F., Kruzhaev, V. V. & Kulaev, G. I., 1 Jan 2004, In: Physica E: Low-Dimensional Systems and Nanostructures. 20, 3-4, p. 396-399 4 p.

    Research output: Contribution to journal › Conference article › peer-review

  12. 2003

  13. Rashba effect in inversion and accumulation InAs layers

    Radantsev, V. F., Ivankiv, I. M. & Yafyasov, A. M., 1 Feb 2003, In: Semiconductors. 37, 2, p. 200-206 7 p.

    Research output: Contribution to journal › Article › peer-review

  14. Rashba splitting in MIS structures based on narrow gap semiconductors: Positive and negative gap

    Radantsev, V. F., 1 Jan 2003, In: Journal of Superconductivity: Incorporating Novel Magnetism. 16, 4, p. 635-645 11 p.

    Research output: Contribution to journal › Article › peer-review

  15. Bychkov-Rashba splitting in inversion layers on heavily-doped p-HgCdTe

    Radantsev, V. F., Kulaev, G. I. & Kruzhaev, V. V., 2003, International Journal of Nanoscience, Vol 2, No 6. Suris, RA. (ed.). World Scientific Publishing Co., p. 419-425 7 p. (International Journal of Nanoscience Series; vol. 2).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

  16. 2002

  17. Determination of the matrix element of the quasi-momentum operator in the zero-gap semiconductor HgSe by the field-effect method in electrolyte

    Shevchenko, O. Y., Radantsev, V., Yafyasov, A., Bozhevol’nov, V. B., Ivankiv, I. & Perepelkin, A. D., 2002, In: Semiconductors. 36, 4, p. 390-393 4 p.

    Research output: Contribution to journal › Article › peer-review

Previous 1 2 3 Next

ID: 57128