Rashba polarization in HgCdTe inversion layers at large depletion charges

Original language	English
Pages (from-to)	396-399
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	20
Issue number	3-4
DOIs	https://doi.org/10.1016/j.physe.2003.08.044
Publication status	Published - 1 Jan 2004

Landau levels, Magnetocapacitance, MOS structures, Narrow-gap and zero-gap semiconductors, Quantum well, Rashba effect

ID: 7210961