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  1. 1997

  2. Crystallization kinetics of amorphous ferroelectric films

    Shur, V. Y., Negashev, S. A., Subbotin, A. L. & Borisova, E. A., 1 Jan 1997, In: Ferroelectrics. 196, 1-4, p. 183-186 4 p.

    Research output: Contribution to journal › Article › peer-review

  3. 1996

  4. Evolution of regular, heterophase structure near phase transition

    Shur, V. Y., Negashev, S. A., Rumyantsev, E. L., Subbotin, A. L., Demina, A. A. & Naumova, I. I., 1 Dec 1996, In: Izvestiya Akademii Nauk. Ser. Fizicheskaya. 60, 10, p. 124-129 6 p.

    Research output: Contribution to journal › Article › peer-review

  5. Evolution of regular heterophase structure near transition POINT

    Shur, V. Y., Negashev, S. A., Rumyantsev, E. L., Subbotin, A. L., Demina, A. A. & Naumova, I. I., 1 Jan 1996, In: Ferroelectrics. 185, 1-4, p. 13-16 4 p.

    Research output: Contribution to journal › Article › peer-review

  6. In situ investigation of crystallization kinetics in PZT films by light scattering

    Shur, V. Y., Negashev, S. A., Subbotin, A. L., Borisova, E. A. & Trolier-McKinstry, S., 1 Jan 1996, In: Materials Research Society Symposium - Proceedings. 433, p. 351-356 6 p.

    Research output: Contribution to journal › Conference article › peer-review

  7. 1995

  8. Elastic light scattering as a probe for detail in situ investigations of domain and phase evolution

    Shur, V. Y., Negashev, S. A., Rumyantsev, E. L., Subbotin, A. L. & Makarov, S. D., 1 Jan 1995, In: Ferroelectrics. 169, 1, p. 63-73 11 p.

    Research output: Contribution to journal › Article › peer-review

  9. 1977

  10. MECHANISM OF BAND GAP VARIATION IN HEAVILY DOPED GALLIUM ARSENIDE.

    Zverev, L. P., Negashev, S. A., Kruzhaev, V. V. & Min'kov, G. M., 1 Jan 1977, In: Semiconductors. 11, 6, p. 603-605 3 p.

    Research output: Contribution to journal › Article › peer-review

  11. 1976

  12. DIRECT DETERMINATION OF FORBIDDEN-BAND WIDTH OF A HEAVILY DOPED SEMICONDUCTOR.

    Zverev, L. P., Kruzhaev, V. V., Negashev, S. A. & Min'kov, G. M., 1 Jan 1976, In: Semiconductors. 10, 3, p. 337-338 2 p.

    Research output: Contribution to journal › Article › peer-review

  13. MECHANISM OF ENERGY RELAXATION IN GaAs AT LOW TEMPERATURES.

    Zverev, L. P., Min'kov, G. M., Negashev, S. A. & Kruzhaev, V. V., 1 Jan 1976, In: Semiconductors. 10, 12, p. 1388-1390 3 p.

    Research output: Contribution to journal › Article › peer-review

  14. METHOD FOR DETERMINATION OF THE CONDUCTION MECHANISM IN SEMICONDUCTORS.

    Zverev, L. P., Min'kov, G. M., Kruzhaev, V. V. & Negashev, S. A., 1 Jan 1976, In: Semiconductors. 10, 4

    Research output: Contribution to journal › Article › peer-review

  15. PHOTOLUMINESCENCE EMITTED FROM p-TYPE GaAs DIFFUSION-DOPED WITH ZINC AND SUBJECTED TO A MAGNETIC FIELD.

    Zverev, L. P., Negashev, S. A. & Kruzhaev, V. V., 1 Jan 1976, In: Semiconductors. 10, 6, p. 609-612 4 p.

    Research output: Contribution to journal › Article › peer-review

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