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  1. 1976

  2. SWITCHING TIME IN LOW-TEMPERATURE IMPURITY BREAKDOWN IN n-TYPE GaAs

    Zverev, L. P., Min'kov, G. M., Negashev, S. A. & Kruzhaev, V. V., 1 Jan 1976, In: Semiconductors. 10, 6, p. 716-717 2 p.

    Research output: Contribution to journal › Article › peer-review

  3. 1975

  4. OPTICAL HEATING OF ELECTRONS IN GaAs

    Zverev, L. P., Min'kov, G. M., Kruzhaev, V. V. & Negashev, S. A., 1 Jan 1975, In: Semiconductors. 9, 11, p. 1420-1421 2 p.

    Research output: Contribution to journal › Article › peer-review

  5. 1974

  6. INFLUENCE OF A STRONG MAGNETIC-FIELD ON PHOTOLUMINESCENCE SPECTRUM OF N-TYPE GALLIUM-ARSENIDE

    Zverev, L. P., Minkov, G. M. & Negashev, S. A., 1974, In: Semiconductors. 7, 8, p. 1056-1057 2 p.

    Research output: Contribution to journal › Article › peer-review

  7. MECHANISM OF RADIATIVE RECOMBINATION IN STRONGLY DOPED P-GAAS

    Zverev, L. P., Kruzhaev, V. V. & Negashev, S. A., 1974, In: JETP Letters. 20, 1, p. 22-24 3 p.

    Research output: Contribution to journal › Article › peer-review

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