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MECHANISM OF BAND GAP VARIATION IN HEAVILY DOPED GALLIUM ARSENIDE.
Research output
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Contribution to journal
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Article
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peer-review
Section of Optoelectronics and Semiconductor Technology
Institute of Natural Sciences and Mathematics
Overview
Cite this
L. P. Zverev
S. A. Negashev
V. V. Kruzhaev
G. M. Min'kov
Original language
English
Pages (from-to)
603-605
Number of pages
3
Journal
Semiconductors
Volume
11
Issue number
6
Publication status
Published -
1 Jan 1977
ASJC Scopus subject areas
Engineering(all)
WoS ResearchAreas Categories
Physics, Condensed Matter
ID: 7211541