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THIN FILMS OF WIDE BAND GAP II-VI SEMICONDUCTOR COMPOUNDS: FEATURES OF PREPARATION: book chapter. / Markov, V. F.; Korotcenkov, G.; Maskaeva, L. N.
HANDBOOK OF II-VI SEMICONDUCTOR-BASED SENSORS AND RADIATION DETECTORS: book. ed. / G. KOROTCENKOV. Vol. Том. 1. Materials and Technology Cham: Springer, 2023. p. 233-275.

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Harvard

Markov, VF, Korotcenkov, G & Maskaeva, LN 2023, THIN FILMS OF WIDE BAND GAP II-VI SEMICONDUCTOR COMPOUNDS: FEATURES OF PREPARATION: book chapter. in G KOROTCENKOV (ed.), HANDBOOK OF II-VI SEMICONDUCTOR-BASED SENSORS AND RADIATION DETECTORS: book. vol. Том. 1. Materials and Technology, Springer, Cham, pp. 233-275. https://doi.org/10.1007/978-3-031-19531-0_10

APA

Markov, V. F., Korotcenkov, G., & Maskaeva, L. N. (2023). THIN FILMS OF WIDE BAND GAP II-VI SEMICONDUCTOR COMPOUNDS: FEATURES OF PREPARATION: book chapter. In G. KOROTCENKOV (Ed.), HANDBOOK OF II-VI SEMICONDUCTOR-BASED SENSORS AND RADIATION DETECTORS: book (Vol. Том. 1. Materials and Technology, pp. 233-275). Springer. https://doi.org/10.1007/978-3-031-19531-0_10

Vancouver

Markov VF, Korotcenkov G, Maskaeva LN. THIN FILMS OF WIDE BAND GAP II-VI SEMICONDUCTOR COMPOUNDS: FEATURES OF PREPARATION: book chapter. In KOROTCENKOV G, editor, HANDBOOK OF II-VI SEMICONDUCTOR-BASED SENSORS AND RADIATION DETECTORS: book. Vol. Том. 1. Materials and Technology. Cham: Springer. 2023. p. 233-275 doi: 10.1007/978-3-031-19531-0_10

Author

Markov, V. F. ; Korotcenkov, G. ; Maskaeva, L. N. / THIN FILMS OF WIDE BAND GAP II-VI SEMICONDUCTOR COMPOUNDS: FEATURES OF PREPARATION : book chapter. HANDBOOK OF II-VI SEMICONDUCTOR-BASED SENSORS AND RADIATION DETECTORS: book. editor / G. KOROTCENKOV. Vol. Том. 1. Materials and Technology Cham : Springer, 2023. pp. 233-275

BibTeX

@inbook{0646b70bb0d74cf2919609a63feb9e5a,
title = "THIN FILMS OF WIDE BAND GAP II-VI SEMICONDUCTOR COMPOUNDS: FEATURES OF PREPARATION: book chapter",
abstract = "The chapter describes the most common and effective methods of obtaining of II-VI semiconductor compounds (CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe) thin films for modern optoelectronic devices and production of chemical sensors. Special attention is paid to such methods as vacuum thermal deposition and its varieties which differ in ways of sputtering of the precursor material, magnetron sputtering, chemical vapor deposition, epitaxial deposition, ion beam sputtering, chemical bath deposition, aerosol spray pyrolysis, electrochemical deposition, and some other methods that have been developed recently. Physics and chemistry of the methods, process characteristics, necessary equipment, conditions and models of film deposition, common features of II-VI semiconductor film synthesis, and advantages and disadvantages leading to the quality degradation are presented for each method. The focus is made on the evaluation of the influence of the process parameters and conditions on the semiconductive and functional (optic, photoelectric) properties of the films, providing the achievement of sensor characteristics maximum for effective practical use of II-VI compounds. In this aspect, characteristic examples are given for a number of compounds on the effect of the production conditions on the kinetic, structural, semiconductor, and optical characteristics of the deposited films.",
author = "Markov, {V. F.} and G. Korotcenkov and Maskaeva, {L. N.}",
note = "G. Korotcenkov is grateful to the State Program of the Republic of Moldova, project 20.80009.5007.02, for supporting his research.",
year = "2023",
doi = "10.1007/978-3-031-19531-0_10",
language = "English",
isbn = "978-3-031-19530-3",
volume = "Том. 1. Materials and Technology",
pages = "233--275",
editor = "G. KOROTCENKOV",
booktitle = "HANDBOOK OF II-VI SEMICONDUCTOR-BASED SENSORS AND RADIATION DETECTORS",
publisher = "Springer",
address = "Germany",

}

RIS

TY - CHAP

T1 - THIN FILMS OF WIDE BAND GAP II-VI SEMICONDUCTOR COMPOUNDS: FEATURES OF PREPARATION

T2 - book chapter

AU - Markov, V. F.

AU - Korotcenkov, G.

AU - Maskaeva, L. N.

N1 - G. Korotcenkov is grateful to the State Program of the Republic of Moldova, project 20.80009.5007.02, for supporting his research.

PY - 2023

Y1 - 2023

N2 - The chapter describes the most common and effective methods of obtaining of II-VI semiconductor compounds (CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe) thin films for modern optoelectronic devices and production of chemical sensors. Special attention is paid to such methods as vacuum thermal deposition and its varieties which differ in ways of sputtering of the precursor material, magnetron sputtering, chemical vapor deposition, epitaxial deposition, ion beam sputtering, chemical bath deposition, aerosol spray pyrolysis, electrochemical deposition, and some other methods that have been developed recently. Physics and chemistry of the methods, process characteristics, necessary equipment, conditions and models of film deposition, common features of II-VI semiconductor film synthesis, and advantages and disadvantages leading to the quality degradation are presented for each method. The focus is made on the evaluation of the influence of the process parameters and conditions on the semiconductive and functional (optic, photoelectric) properties of the films, providing the achievement of sensor characteristics maximum for effective practical use of II-VI compounds. In this aspect, characteristic examples are given for a number of compounds on the effect of the production conditions on the kinetic, structural, semiconductor, and optical characteristics of the deposited films.

AB - The chapter describes the most common and effective methods of obtaining of II-VI semiconductor compounds (CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe) thin films for modern optoelectronic devices and production of chemical sensors. Special attention is paid to such methods as vacuum thermal deposition and its varieties which differ in ways of sputtering of the precursor material, magnetron sputtering, chemical vapor deposition, epitaxial deposition, ion beam sputtering, chemical bath deposition, aerosol spray pyrolysis, electrochemical deposition, and some other methods that have been developed recently. Physics and chemistry of the methods, process characteristics, necessary equipment, conditions and models of film deposition, common features of II-VI semiconductor film synthesis, and advantages and disadvantages leading to the quality degradation are presented for each method. The focus is made on the evaluation of the influence of the process parameters and conditions on the semiconductive and functional (optic, photoelectric) properties of the films, providing the achievement of sensor characteristics maximum for effective practical use of II-VI compounds. In this aspect, characteristic examples are given for a number of compounds on the effect of the production conditions on the kinetic, structural, semiconductor, and optical characteristics of the deposited films.

UR - https://www.elibrary.ru/item.asp?id=59929558

U2 - 10.1007/978-3-031-19531-0_10

DO - 10.1007/978-3-031-19531-0_10

M3 - Chapter

SN - 978-3-031-19530-3

VL - Том. 1. Materials and Technology

SP - 233

EP - 275

BT - HANDBOOK OF II-VI SEMICONDUCTOR-BASED SENSORS AND RADIATION DETECTORS

A2 - KOROTCENKOV, G.

PB - Springer

CY - Cham

ER -

ID: 52449575