The chapter describes the most common and effective methods of obtaining of II-VI semiconductor compounds (CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe) thin films for modern optoelectronic devices and production of chemical sensors. Special attention is paid to such methods as vacuum thermal deposition and its varieties which differ in ways of sputtering of the precursor material, magnetron sputtering, chemical vapor deposition, epitaxial deposition, ion beam sputtering, chemical bath deposition, aerosol spray pyrolysis, electrochemical deposition, and some other methods that have been developed recently. Physics and chemistry of the methods, process characteristics, necessary equipment, conditions and models of film deposition, common features of II-VI semiconductor film synthesis, and advantages and disadvantages leading to the quality degradation are presented for each method. The focus is made on the evaluation of the influence of the process parameters and conditions on the semiconductive and functional (optic, photoelectric) properties of the films, providing the achievement of sensor characteristics maximum for effective practical use of II-VI compounds. In this aspect, characteristic examples are given for a number of compounds on the effect of the production conditions on the kinetic, structural, semiconductor, and optical characteristics of the deposited films.