Standard

Temperature Scaling in the Quantum-Hall-Effect Regime in a HgTe Quantum Well with an Inverted Energy Spectrum. / Arapov, Yu. G.; Gudina, S. V.; Neverov, V. N. et al.
In: Semiconductors, Vol. 49, No. 12, 12.2015, p. 1545-1549.

Research output: Contribution to journal › Article › peer-review

Harvard

Arapov, YG, Gudina, SV, Neverov, VN, Podgornykh, SM, Popov, MR, Harus, GI, Shelushinina, NG, Yakunin, MV, Mikhailov, NN & Dvoretsky, SA 2015, 'Temperature Scaling in the Quantum-Hall-Effect Regime in a HgTe Quantum Well with an Inverted Energy Spectrum', Semiconductors, vol. 49, no. 12, pp. 1545-1549. https://doi.org/10.1134/S1063782615120039

APA

Arapov, Y. G., Gudina, S. V., Neverov, V. N., Podgornykh, S. M., Popov, M. R., Harus, G. I., Shelushinina, N. G., Yakunin, M. V., Mikhailov, N. N., & Dvoretsky, S. A. (2015). Temperature Scaling in the Quantum-Hall-Effect Regime in a HgTe Quantum Well with an Inverted Energy Spectrum. Semiconductors, 49(12), 1545-1549. https://doi.org/10.1134/S1063782615120039

Vancouver

Arapov YG, Gudina SV, Neverov VN, Podgornykh SM, Popov MR, Harus GI et al. Temperature Scaling in the Quantum-Hall-Effect Regime in a HgTe Quantum Well with an Inverted Energy Spectrum. Semiconductors. 2015 Dec;49(12):1545-1549. doi: 10.1134/S1063782615120039

Author

Arapov, Yu. G. ; Gudina, S. V. ; Neverov, V. N. et al. / Temperature Scaling in the Quantum-Hall-Effect Regime in a HgTe Quantum Well with an Inverted Energy Spectrum. In: Semiconductors. 2015 ; Vol. 49, No. 12. pp. 1545-1549.

BibTeX

@article{ec9422e409e844cda369090aca965a14,
title = "Temperature Scaling in the Quantum-Hall-Effect Regime in a HgTe Quantum Well with an Inverted Energy Spectrum",
keywords = "PHASE-TRANSITIONS, UNIVERSALITY, LOCALIZATION, INSULATOR",
author = "Arapov, {Yu. G.} and Gudina, {S. V.} and Neverov, {V. N.} and Podgornykh, {S. M.} and Popov, {M. R.} and Harus, {G. I.} and Shelushinina, {N. G.} and Yakunin, {M. V.} and Mikhailov, {N. N.} and Dvoretsky, {S. A.}",
year = "2015",
month = dec,
doi = "10.1134/S1063782615120039",
language = "English",
volume = "49",
pages = "1545--1549",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "American Institute of Physics Publising LLC",
number = "12",
note = "19th Symposium on Nanophysics and Nanoelectronics ; Conference date: 10-03-2015 Through 14-03-2015",

}

RIS

TY - JOUR

T1 - Temperature Scaling in the Quantum-Hall-Effect Regime in a HgTe Quantum Well with an Inverted Energy Spectrum

AU - Arapov, Yu. G.

AU - Gudina, S. V.

AU - Neverov, V. N.

AU - Podgornykh, S. M.

AU - Popov, M. R.

AU - Harus, G. I.

AU - Shelushinina, N. G.

AU - Yakunin, M. V.

AU - Mikhailov, N. N.

AU - Dvoretsky, S. A.

PY - 2015/12

Y1 - 2015/12

KW - PHASE-TRANSITIONS

KW - UNIVERSALITY

KW - LOCALIZATION

KW - INSULATOR

UR - http://www.scopus.com/inward/record.url?scp=84958150222&partnerID=8YFLogxK

UR - http://elibrary.ru/item.asp?id=26832791

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000366649300002

U2 - 10.1134/S1063782615120039

DO - 10.1134/S1063782615120039

M3 - Article

VL - 49

SP - 1545

EP - 1549

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 12

T2 - 19th Symposium on Nanophysics and Nanoelectronics

Y2 - 10 March 2015 through 14 March 2015

ER -

ID: 562638