Temperature Scaling in the Quantum-Hall-Effect Regime in a HgTe Quantum Well with an Inverted Energy Spectrum › Research Explorer

Temperature Scaling in the Quantum-Hall-Effect Regime in a HgTe Quantum Well with an Inverted Energy Spectrum

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1134/S1063782615120039
Final published version

Yu. G. Arapov
S. V. Gudina
V. N. Neverov
S. M. Podgornykh
M. R. Popov
G. I. Harus
N. G. Shelushinina
M. V. Yakunin
N. N. Mikhailov
S. A. Dvoretsky

Original language	English
Pages (from-to)	1545-1549
Number of pages	5
Journal	Semiconductors
Volume	49
Issue number	12
DOIs	https://doi.org/10.1134/S1063782615120039
Publication status	Published - Dec 2015
Event	19th Symposium on Nanophysics and Nanoelectronics - Nizhny Novgorod, Russian Federation Duration: 10 Mar 2015 → 14 Mar 2015

ASJC Scopus subject areas

Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

Research areas

PHASE-TRANSITIONS, UNIVERSALITY, LOCALIZATION, INSULATOR

Level of Research Output

VAK List

GRNTI

29.00.00 PHYSICS

WoS ResearchAreas Categories

Physics, Condensed Matter

ID: 562638