Relaxation of excited surface states of thin Ge-implanted silica films probed by OSEE spectroscopy › Research Explorer

Relaxation of excited surface states of thin Ge-implanted silica films probed by OSEE spectroscopy

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1016/j.jlumin.2015.08.073
Final published version

A. F. Zatsepin
E. A. Buntov
A. P. Mikhailovich
A. I. Slesarev
B. Schmidt
A. von Czarnowski
Hans-Joachim Fitting

Original language	English
Pages (from-to)	143-150
Number of pages	8
Journal	Journal of Luminescence
Volume	169
DOIs	https://doi.org/10.1016/j.jlumin.2015.08.073
Publication status	Published - Jan 2016

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Chemistry(all)
Biochemistry
Biophysics

Research areas

Surface states, Relaxation, Thin films, Ion implantation, Electron emission, Energy structure, ELECTRON-EMISSION, ABSORPTION-EDGE, PHOTOEMISSION, DIOXIDE

WoS ResearchAreas Categories

Optics

ID: 604059