FIELD: production of silicon. SUBSTANCE: invention is related to production of silicon in form of microsized films that can be used in microelectronics, energy conversion and storage devices. Electrolysis of the halide melt from a mixture of salts containing, wt.%: 5-30 lithium chloride (LiCl), 5-20 potassium chloride (KCl), 45-90 caesium chloride (CsCl), 1-5 potassium hexafluorosilicate (K₂SiF₆) is carried out. The electrolysis of the melt is carried out in an inert atmosphere at a temperature of 400 to 550°C with periodic current reversal from anode to cathode. The magnitude of the anode current pulse is from 5 to 45 mA/cm² with a duration of 1 to 30 s, and the magnitude of the cathode current pulse is from 3 to 30 mA/cm² with a duration of 60 to 3600 s. EFFECT: method makes it possible to obtain continuous microsized silicon films with a decrease in the electrodeposition temperature, to increase the purity of silicon and to increase the service life of the structural materials of the reactor for implementation of the method. 1 cl, 3 dwg.