FIELD: microelectronics. SUBSTANCE: material may be used in devices with low levels of current and voltage when short-time switches at temperature of 10-150 centigrade are required. This is achieved by addition of germanium selenide and arsenic selenide to silver selenide according to empirical formulation (Ag2Se)x(GeSe)2(1-x)(AS2Se3)x where 0,1?x? 0,5. EFFECT: material provides required temperature range, decreases electric resistance relaxation time down to 11-60 s, increases electric resistance up to 103-105 Ohm m. 2 tbl 1 dwg.