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  1. 2013

  2. Strong magnetic field effect on over-the-barrier transport in Pb-p-Hg1-xCdxTe Schottky barriers

    Radantsev, V. F. & Zavyalov, V. V., Mar 2013, In: Semiconductor Science and Technology. 28, 3, 10 p., 035004.

    Research output: Contribution to journal › Article › peer-review

  3. 2010

  4. Electrical and morphological properties of CdTe films synthesized by the method of molecular deposition

    Mayorov, V. A., Yafaysov, A. M., Bogevolnov, V. B. & Radanstev, V. F., 2010, In: Semiconductors. 44, 5, p. 564-567 4 p.

    Research output: Contribution to journal › Article › peer-review

  5. 2007

  6. Bichkov-rashba spin-orbit splitting in kinetic binding regime in HgCdTe accumulation layers

    Radantsev, V. F. & Kruzhaev, V. V., 1 Jun 2007, In: International Journal of Nanoscience. 6, 3-4, p. 301-304 4 p.

    Research output: Contribution to journal › Article › peer-review

  7. 2006

  8. Rashba splitting of kinetically bound states in gated HgCdTe surface quantum wells

    Radantsev, V. F. & Kruzhaev, V. V., 1 Aug 2006, In: Physica E: Low-Dimensional Systems and Nanostructures. 34, 1-2, p. 340-343 4 p.

    Research output: Contribution to journal › Article › peer-review

  9. 2004

  10. Kinetic confinement and zero-electric-field binding in HgCdTe accumulation layers

    Radantsev, V. F., Kruzhaev, V. V. & Kulaev, G. I., 30 Nov 2004, In: International Journal of Modern Physics B. 18, 27-29, p. 3637-3640 4 p.

    Research output: Contribution to journal › Article › peer-review

  11. Rashba polarization in HgCdTe inversion layers at large depletion charges

    Radantsev, V. F., Kruzhaev, V. V. & Kulaev, G. I., 1 Jan 2004, In: Physica E: Low-Dimensional Systems and Nanostructures. 20, 3-4, p. 396-399 4 p.

    Research output: Contribution to journal › Conference article › peer-review

  12. 2003

  13. Rashba effect in inversion and accumulation InAs layers

    Radantsev, V. F., Ivankiv, I. M. & Yafyasov, A. M., 1 Feb 2003, In: Semiconductors. 37, 2, p. 200-206 7 p.

    Research output: Contribution to journal › Article › peer-review

  14. Rashba splitting in MIS structures based on narrow gap semiconductors: Positive and negative gap

    Radantsev, V. F., 1 Jan 2003, In: Journal of Superconductivity: Incorporating Novel Magnetism. 16, 4, p. 635-645 11 p.

    Research output: Contribution to journal › Article › peer-review

  15. Bychkov-Rashba splitting in inversion layers on heavily-doped p-HgCdTe

    Radantsev, V. F., Kulaev, G. I. & Kruzhaev, V. V., 2003, International Journal of Nanoscience, Vol 2, No 6. Suris, RA. (ed.). World Scientific Publishing Co., p. 419-425 7 p. (International Journal of Nanoscience Series; vol. 2).

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

  16. 2002

  17. Determination of the matrix element of the quasi-momentum operator in the zero-gap semiconductor HgSe by the field-effect method in electrolyte

    Shevchenko, O. Y., Radantsev, V., Yafyasov, A., Bozhevol’nov, V. B., Ivankiv, I. & Perepelkin, A. D., 2002, In: Semiconductors. 36, 4, p. 390-393 4 p.

    Research output: Contribution to journal › Article › peer-review

  18. Rashba splitting in MIS structures HgCdTe

    Radantsev, V. & Yafyasov, A., 2002, In: Journal of Experimental and Theoretical Physics. 95, 3, p. 491-501 11 p.

    Research output: Contribution to journal › Article › peer-review

  19. 2001

  20. Zero-field spin splitting in HgTe surface quantum well

    Radantsev, V., Yafyasov, A., Bogevolnov, V., Ivankiv, I. & Shevchenko, O., 1 Jun 2001, In: Surface Science. 482-485, p. 989-993 5 p.

    Research output: Contribution to journal › Article › peer-review

  21. Exchange and spin-orbit effects in inversion layers on the gapless semimagnetic semiconductor HgMnTe

    Radantsev, V., Yafyasov, A. & Bogevolnov, V., 1 May 2001, In: Semiconductor Science and Technology. 16, 5, p. 320-330 11 p.

    Research output: Contribution to journal › Article › peer-review

  22. Spin-orbit splitting in the HgTe surface quantum well

    Radantsev, V., Yafyasov, A. M., Bogevolnov, V. & Ivankiv, I. M., 2001, In: Journal of Physics Condensed Matter. 13, 5, p. 851-858 8 p.

    Research output: Contribution to journal › Article › peer-review

  23. Two-dimensional electron gas in semimagnetic semiconductor HgMnTe with inverted bands

    Bogevolnov, V., Ivankiv, I., Yafyasov, A. & Radantsev, V., 2001, In: Journal of Experimental and Theoretical Physics. 92, 1, p. 135-145 11 p.

    Research output: Contribution to journal › Article › peer-review

  24. Two-dimensional electron gas in semimagnetic semiconductor HgMnTe with inverted bands

    Bogevolnov, V., Ivankiv, I., Yafyasov, A. & Radantsev, V., 2001, In: Журнал экспериментальной и теоретической физики. 119, 1, p. 154-165 12 p.

    Research output: Contribution to journal › Article › peer-review

  25. 1999

  26. Spin effects in the magneto-oscillations of the capacitance of a two-dimensional gas of semiconductors with Kane and Dirac spectra

    Radantsev, V. F., 1 Mar 1999, In: Journal of Experimental and Theoretical Physics. 88, 3, p. 552-560 9 p.

    Research output: Contribution to journal › Article › peer-review

  27. 1996

  28. Pseudoultrarelativistic behavior and specification of spinlike effects in the two-dimensional electron gas in Kane semiconductors with direct and inverted band structure

    Radantsev, V. F., Deryabina, T. I., Kulaev, G. I. & Rumyantsev, E. L., 1996, In: Physical Review B. 53, 23, p. 15756-15766 11 p.

    Research output: Contribution to journal › Article › peer-review

  29. 1994

  30. Tunnelling in Pb-p-HgCdTe Schottky barriers in longitudinal and transverse magnetic fields

    Zav'ialov, V. V. & Radantsev, V. F., 1 Mar 1994, In: Semiconductor Science and Technology. 9, 3, p. 281-288 8 p.

    Research output: Contribution to journal › Article › peer-review

  31. 1993

  32. Stationary character of 2D states in inversion and accumulation layers on zero-gap HgCdTe

    Radantsev, V. F., 1 Mar 1993, In: Semiconductor Science and Technology. 8, 3, p. 394-398 5 p.

    Research output: Contribution to journal › Article › peer-review

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