Tunneling effects in tilted magnetic fields in n-InGaAs/GaAs structures with strongly coupled double quantum wells › Research Explorer

Tunneling effects in tilted magnetic fields in n-InGaAs/GaAs structures with strongly coupled double quantum wells

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1134/S1063782613110055
Final published version

Yu G. Arapov
S. V. Gudina
A. S. Klepikova
V. N. Neverov
S. M. Podgornykh
M. V. Yakunin
B. N. Zvonkov

Original language	English
Pages (from-to)	1447-1451
Number of pages	5
Journal	Semiconductors
Volume	47
Issue number	11
DOIs	https://doi.org/10.1134/S1063782613110055
Publication status	Published - Nov 2013

ASJC Scopus subject areas

Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

WoS ResearchAreas Categories

Physics, Condensed Matter

Research areas

2-DIMENSIONAL ELECTRON-GAS, SCATTERING TIME, QUASI-PARTICLE, LIFETIME, TEMPERATURE, RELAXATION, RESONANCE

ID: 846338