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Transport properties of amorphous chalcogenides in the system Cu-Ag-Ge-As-Se in a broad range of temperatures and pressures. / Melnikova, N.; Kheifets, O.; Babushkin, A. et al.
In: EPJ Web of Conferences, Vol. 15, 03004, 01.2011.

Research output: Contribution to journal › Conference article › peer-review

Harvard

Melnikova, N, Kheifets, O, Babushkin, A & Sukhanova, G 2011, 'Transport properties of amorphous chalcogenides in the system Cu-Ag-Ge-As-Se in a broad range of temperatures and pressures', EPJ Web of Conferences, vol. 15, 03004. https://doi.org/10.1051/epjconf/20111503004

APA

Melnikova, N., Kheifets, O., Babushkin, A., & Sukhanova, G. (2011). Transport properties of amorphous chalcogenides in the system Cu-Ag-Ge-As-Se in a broad range of temperatures and pressures. EPJ Web of Conferences, 15, [03004]. https://doi.org/10.1051/epjconf/20111503004

Vancouver

Melnikova N, Kheifets O, Babushkin A, Sukhanova G. Transport properties of amorphous chalcogenides in the system Cu-Ag-Ge-As-Se in a broad range of temperatures and pressures. EPJ Web of Conferences. 2011 Jan;15:03004. doi: 10.1051/epjconf/20111503004

Author

Melnikova, N. ; Kheifets, O. ; Babushkin, A. et al. / Transport properties of amorphous chalcogenides in the system Cu-Ag-Ge-As-Se in a broad range of temperatures and pressures. In: EPJ Web of Conferences. 2011 ; Vol. 15.

BibTeX

@article{4ccf0e5d97ca4eda8a9ffbc82c824e35,
title = "Transport properties of amorphous chalcogenides in the system Cu-Ag-Ge-As-Se in a broad range of temperatures and pressures",
abstract = "Electrical and thermoelectrical properties of amorphous chalcogenides Cu1-xAgxGeAsSe3 (x = 0.5-1.0) were examined in the temperature interval from 10 to 400 K at atmospheric pressure and at 300 K under pressures to 50 GPa. All the materials were found to exhibit ionic or mixed electronic-ionic conductivity.",
author = "N. Melnikova and O. Kheifets and A. Babushkin and G. Sukhanova",
year = "2011",
month = jan,
doi = "10.1051/epjconf/20111503004",
language = "English",
volume = "15",
journal = "EPJ Web of Conferences",
issn = "2261-236X",
publisher = "EDP Sciences",

}

RIS

TY - JOUR

T1 - Transport properties of amorphous chalcogenides in the system Cu-Ag-Ge-As-Se in a broad range of temperatures and pressures

AU - Melnikova, N.

AU - Kheifets, O.

AU - Babushkin, A.

AU - Sukhanova, G.

PY - 2011/1

Y1 - 2011/1

N2 - Electrical and thermoelectrical properties of amorphous chalcogenides Cu1-xAgxGeAsSe3 (x = 0.5-1.0) were examined in the temperature interval from 10 to 400 K at atmospheric pressure and at 300 K under pressures to 50 GPa. All the materials were found to exhibit ionic or mixed electronic-ionic conductivity.

AB - Electrical and thermoelectrical properties of amorphous chalcogenides Cu1-xAgxGeAsSe3 (x = 0.5-1.0) were examined in the temperature interval from 10 to 400 K at atmospheric pressure and at 300 K under pressures to 50 GPa. All the materials were found to exhibit ionic or mixed electronic-ionic conductivity.

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000305946500042

UR - http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=84921536135

U2 - 10.1051/epjconf/20111503004

DO - 10.1051/epjconf/20111503004

M3 - Conference article

VL - 15

JO - EPJ Web of Conferences

JF - EPJ Web of Conferences

SN - 2261-236X

M1 - 03004

ER -

ID: 37965104