Surface topology, electrophysical properties and formation mechanism of tin(ii) sulfide thin films

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Surface topology, electrophysical properties and formation mechanism of tin(ii) sulfide thin films. / Kozhevnikova, N.; Maskaeva, L.; Enyashin, A. et al.
In: Nanosystems: Physics, Chemistry, Mathematics, Vol. 14, No. 6, 2023, p. 699-704.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{2b052e901cb54652b3d70487128f7fbf,

title = "Surface topology, electrophysical properties and formation mechanism of tin(ii) sulfide thin films",

abstract = "Photosensitive nanocrystalline SnS films with a size of coherent X-ray scattering regions of about 30 nm were obtained by chemical bath deposition. It has been demonstrated that the deposition time affects significantly both microstructure and thickness of the film as well as the size of the particles{\textquoteright} agglomerates forming the film. The current sensitivity of the obtained films was studied. All synthesized films, regardless of the duration of synthesis, reveal p-type conductivity due to Sn vacancies. Atomic force microscopy measurements and fractal approach provide a detailed description of the processes occurring during film formation. The characteristics of the fabricated SnS films are potentially useful for design of advanced absorbing layers within thin film solar cells. {\textcopyright} Kozhevnikova N.S., Maskaeva L.N., Enyashin A.N., Tyutyunnik A.P., Lipina O.A., Selyanin I.O., Markov V.F., 2023.",

author = "N. Kozhevnikova and L. Maskaeva and A. Enyashin and A. Tyutyunnik and O. Lipina and I. Selyanin and Markov, {V. F.}",

note = "ACKNOWLEDGEMENTS This work was carried out in accordance with the scientific and research plans and state assignment of the ISSC UB RAS and Ural Federal University Program of Development within the Priority-2030 Program (Ministry of Science and Higher Education of the Russian Federation).",

year = "2023",

doi = "10.17586/2220-8054-2023-14-6-699-704",

language = "English",

volume = "14",

pages = "699--704",

journal = "Nanosystems: Physics, Chemistry, Mathematics",

issn = "2220-8054",

publisher = "Санкт-Петербургский национальный исследовательский университет информационных технологий, механики и оптики",

number = "6",

}

RIS

TY - JOUR

T1 - Surface topology, electrophysical properties and formation mechanism of tin(ii) sulfide thin films

AU - Kozhevnikova, N.

AU - Maskaeva, L.

AU - Enyashin, A.

AU - Tyutyunnik, A.

AU - Lipina, O.

AU - Selyanin, I.

AU - Markov, V. F.

N1 - ACKNOWLEDGEMENTS This work was carried out in accordance with the scientific and research plans and state assignment of the ISSC UB RAS and Ural Federal University Program of Development within the Priority-2030 Program (Ministry of Science and Higher Education of the Russian Federation).

PY - 2023

Y1 - 2023

N2 - Photosensitive nanocrystalline SnS films with a size of coherent X-ray scattering regions of about 30 nm were obtained by chemical bath deposition. It has been demonstrated that the deposition time affects significantly both microstructure and thickness of the film as well as the size of the particles’ agglomerates forming the film. The current sensitivity of the obtained films was studied. All synthesized films, regardless of the duration of synthesis, reveal p-type conductivity due to Sn vacancies. Atomic force microscopy measurements and fractal approach provide a detailed description of the processes occurring during film formation. The characteristics of the fabricated SnS films are potentially useful for design of advanced absorbing layers within thin film solar cells. © Kozhevnikova N.S., Maskaeva L.N., Enyashin A.N., Tyutyunnik A.P., Lipina O.A., Selyanin I.O., Markov V.F., 2023.

AB - Photosensitive nanocrystalline SnS films with a size of coherent X-ray scattering regions of about 30 nm were obtained by chemical bath deposition. It has been demonstrated that the deposition time affects significantly both microstructure and thickness of the film as well as the size of the particles’ agglomerates forming the film. The current sensitivity of the obtained films was studied. All synthesized films, regardless of the duration of synthesis, reveal p-type conductivity due to Sn vacancies. Atomic force microscopy measurements and fractal approach provide a detailed description of the processes occurring during film formation. The characteristics of the fabricated SnS films are potentially useful for design of advanced absorbing layers within thin film solar cells. © Kozhevnikova N.S., Maskaeva L.N., Enyashin A.N., Tyutyunnik A.P., Lipina O.A., Selyanin I.O., Markov V.F., 2023.

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UR - https://www.elibrary.ru/item.asp?id=57597733

U2 - 10.17586/2220-8054-2023-14-6-699-704

DO - 10.17586/2220-8054-2023-14-6-699-704

M3 - Article

VL - 14

SP - 699

EP - 704

JO - Nanosystems: Physics, Chemistry, Mathematics

JF - Nanosystems: Physics, Chemistry, Mathematics

SN - 2220-8054

IS - 6

ER -

ID: 51617462