Standard

Study of the voltage drop process for the case of high-power thyristors switched in the impact-ionization mode. / Gusev, A. I.; Lyubutin, S. K.; Rukin, S. N. et al.
In: Semiconductors, Vol. 51, No. 5, 05.2017, p. 649-656.

Research output: Contribution to journalArticlepeer-review

Harvard

APA

Vancouver

Author

BibTeX

@article{9bacad7815784b8b952ade72144198bb,
title = "Study of the voltage drop process for the case of high-power thyristors switched in the impact-ionization mode",
keywords = "FRONT, TIMES",
author = "Gusev, {A. I.} and Lyubutin, {S. K.} and Rukin, {S. N.} and Tsyranov, {S. N.}",
year = "2017",
month = may,
doi = "10.1134/S1063782617050098",
language = "English",
volume = "51",
pages = "649--656",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

RIS

TY - JOUR

T1 - Study of the voltage drop process for the case of high-power thyristors switched in the impact-ionization mode

AU - Gusev, A. I.

AU - Lyubutin, S. K.

AU - Rukin, S. N.

AU - Tsyranov, S. N.

PY - 2017/5

Y1 - 2017/5

KW - FRONT

KW - TIMES

UR - http://www.scopus.com/inward/record.url?scp=85019542995&partnerID=8YFLogxK

UR - https://elibrary.ru/item.asp?id=31024919

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000401666300020

U2 - 10.1134/S1063782617050098

DO - 10.1134/S1063782617050098

M3 - Article

VL - 51

SP - 649

EP - 656

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 5

ER -

ID: 1812897