TY - JOUR

T1 - Structural, electronic, and optical properties of 6H-SiC layers synthesized by implantation of carbon ions into silicon

AU - Boukhvalov, D.

AU - Zatsepin, D.

AU - Biryukov, D.

AU - Shchapova, Yu.

AU - Gavrilov, N.

AU - Zatsepin, A.

N1 - The study was supported by the Ministry of Science and Higher Education of the Russian Federation ( Ural Federal University Program of Development within the Priority-2030 Program, project 4.38). The samples of SiC films were synthesized at the Institute of Electrophysics, Ural Branch of the Russian Academy of Sciences . The equipment of Ural Center \u2018\u2018Modern Nanotechnologies\u2019\u2019 of Ural Federal University (Reg. 2968) was used for samples characterization. Raman spectra were taken at \u201CGeoanalitik\u201D shared research facilities of FSBIS Zavaritsky Institute of Geology and Geochemistry of the Ural Branch of the Russian Academy .

PY - 2024/9/1

Y1 - 2024/9/1

N2 - Systematic studies of the gradual fabrication by means of carbon ion-implantation of high-quality 6H-SiC layers on silicon surfaces have been carried out. The fluence of carbon ions varied from 5 × 1015 cm−2 to 1017 cm−2. Results of first-principle calculations, X-ray diffraction (XRD), and Raman spectroscopy demonstrate the amorphization of silicon substrate without any tendency to the segregation of carbon in the samples synthesized at low fluencies. The formation of a SiO2-like structure at this stage was also detected. X-ray photoelectron spectroscopy (XPS), XRD, and Raman spectroscopy demonstrate that an increase in carbon content at 1017 cm−2 fluence leads to the growth of 6H-SiC films on the surface of the amorphous silicon substrate. Atomic force microscopy (AFM) data obtained also demonstrates the decreasing of surface roughens after the formation of SiC film. XPS and Raman spectra suggest that excessive carbon content leaves the SiC matrix via the formation of an insignificant amount of partially oxidized carbon nanostructures. Optical measurements also support the claim of high-quality 6H-SiC film formation in the samples synthesized at 1017 cm−2 fluence and demonstrate the absence of any detectable contribution of nanostructures formed from excessive carbon on the optical properties of the material under study.

AB - Systematic studies of the gradual fabrication by means of carbon ion-implantation of high-quality 6H-SiC layers on silicon surfaces have been carried out. The fluence of carbon ions varied from 5 × 1015 cm−2 to 1017 cm−2. Results of first-principle calculations, X-ray diffraction (XRD), and Raman spectroscopy demonstrate the amorphization of silicon substrate without any tendency to the segregation of carbon in the samples synthesized at low fluencies. The formation of a SiO2-like structure at this stage was also detected. X-ray photoelectron spectroscopy (XPS), XRD, and Raman spectroscopy demonstrate that an increase in carbon content at 1017 cm−2 fluence leads to the growth of 6H-SiC films on the surface of the amorphous silicon substrate. Atomic force microscopy (AFM) data obtained also demonstrates the decreasing of surface roughens after the formation of SiC film. XPS and Raman spectra suggest that excessive carbon content leaves the SiC matrix via the formation of an insignificant amount of partially oxidized carbon nanostructures. Optical measurements also support the claim of high-quality 6H-SiC film formation in the samples synthesized at 1017 cm−2 fluence and demonstrate the absence of any detectable contribution of nanostructures formed from excessive carbon on the optical properties of the material under study.

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U2 - 10.1016/j.apsusc.2024.160379

DO - 10.1016/j.apsusc.2024.160379

M3 - Article

VL - 666

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

M1 - 160379

ER -