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Stable Sulfuric Vapor Transport and Liquid Sulfur Growth on Transition Metal Dichalcogenides. / Chareev, Dmitriy A.; Khan, Md Ezaz Hasan; Karmakar, Debjani et al.
In: Crystal Growth and Design, Vol. 23, No. 4, 2023, p. 2287-2294.

Research output: Contribution to journal › Article › peer-review

Harvard

Chareev, DA, Khan, MEH, Karmakar, D, Nekrasov, AN, Nickolsky, MS, Eriksson, O, Delin, A, Vasiliev, AN & Abdel-Hafiez, M 2023, 'Stable Sulfuric Vapor Transport and Liquid Sulfur Growth on Transition Metal Dichalcogenides', Crystal Growth and Design, vol. 23, no. 4, pp. 2287-2294. https://doi.org/10.1021/acs.cgd.2c01318

APA

Chareev, D. A., Khan, M. E. H., Karmakar, D., Nekrasov, A. N., Nickolsky, M. S., Eriksson, O., Delin, A., Vasiliev, A. N., & Abdel-Hafiez, M. (2023). Stable Sulfuric Vapor Transport and Liquid Sulfur Growth on Transition Metal Dichalcogenides. Crystal Growth and Design, 23(4), 2287-2294. https://doi.org/10.1021/acs.cgd.2c01318

Vancouver

Chareev DA, Khan MEH, Karmakar D, Nekrasov AN, Nickolsky MS, Eriksson O et al. Stable Sulfuric Vapor Transport and Liquid Sulfur Growth on Transition Metal Dichalcogenides. Crystal Growth and Design. 2023;23(4):2287-2294. doi: 10.1021/acs.cgd.2c01318

Author

Chareev, Dmitriy A. ; Khan, Md Ezaz Hasan ; Karmakar, Debjani et al. / Stable Sulfuric Vapor Transport and Liquid Sulfur Growth on Transition Metal Dichalcogenides. In: Crystal Growth and Design. 2023 ; Vol. 23, No. 4. pp. 2287-2294.

BibTeX

@article{8ca0f8699fe948f6b45ab3d8bf603318,
title = "Stable Sulfuric Vapor Transport and Liquid Sulfur Growth on Transition Metal Dichalcogenides",
abstract = "Transition metal dichalcogenides (TMDs) are an emergent class of low-dimensional materials with growing applications in the field of nanoelectronics. However, efficient methods for synthesizing large monocrystals of these systems are still lacking. Here, we describe an efficient synthetic route for a large number of TMDs that were obtained in quartz glass ampoules by sulfuric vapor transport and liquid sulfur. Unlike the sublimation technique, the metal enters the gas phase in the form of molecules, hence containing a greater amount of sulfur than the growing crystal. We have investigated the physical properties for a selection of these crystals and compared them to state-of-the-art findings reported in the literature. The acquired electronic properties features demonstrate the overall high quality of single crystals grown in this work as exemplified by CoS2, ReS2, NbS2, and TaS2. This new approach to synthesize high-quality TMD single crystals can alleviate many material quality concerns and is suitable for emerging electronic devices. {\textcopyright} 2023 The Authors. Published by American Chemical Society.",
author = "Chareev, {Dmitriy A.} and Khan, {Md Ezaz Hasan} and Debjani Karmakar and Nekrasov, {Aleksey N.} and Nickolsky, {Maximilian S.} and Olle Eriksson and Anna Delin and Vasiliev, {Alexander N.} and Mahmoud Abdel-Hafiez",
note = "M.A.-H. acknowledges the financial support from the Swedish Research Council (VR) under project No. 2018-05393. D.A.C. acknowledges the financial support by the Grant of the President of the Russian Federation for the state support of the leading scientific schools of the Russian Federation No. NSh-2394.2022.1.5. O.E. acknowledges the financial support by the Knut and Alice Wallenberg Foundation through Grant No.2018.0060. O.E. also acknowledges the support by the Swedish Research Council (VR), the Foundation for Strategic Research (SSF), the Swedish Energy Agency (Energimyndigheten), the European Research Council (854843-FASTCORR), eSSENCE, and StandUP. The computations/data handling was enabled by resources provided by the Swedish National Infrastructure for Computing (SNIC). Financial support from Vetenskapsr{\aa}det (Grant Nos. VR 2015-04608, VR 2016-05980, and VR 2019-05304) and the Knut and Alice Wallenberg Foundation (Grant No. 2018.0060) is acknowledged. Computations were enabled by resources provided by the Swedish National Infrastructure for Computing (SNIC) at PDC and NSC, partially funded by the Swedish Research Council through grant agreement no. 2018-05973.",
year = "2023",
doi = "10.1021/acs.cgd.2c01318",
language = "English",
volume = "23",
pages = "2287--2294",
journal = "Crystal Growth and Design",
issn = "1528-7483",
publisher = "American Chemical Society",
number = "4",

}

RIS

TY - JOUR

T1 - Stable Sulfuric Vapor Transport and Liquid Sulfur Growth on Transition Metal Dichalcogenides

AU - Chareev, Dmitriy A.

AU - Khan, Md Ezaz Hasan

AU - Karmakar, Debjani

AU - Nekrasov, Aleksey N.

AU - Nickolsky, Maximilian S.

AU - Eriksson, Olle

AU - Delin, Anna

AU - Vasiliev, Alexander N.

AU - Abdel-Hafiez, Mahmoud

N1 - M.A.-H. acknowledges the financial support from the Swedish Research Council (VR) under project No. 2018-05393. D.A.C. acknowledges the financial support by the Grant of the President of the Russian Federation for the state support of the leading scientific schools of the Russian Federation No. NSh-2394.2022.1.5. O.E. acknowledges the financial support by the Knut and Alice Wallenberg Foundation through Grant No.2018.0060. O.E. also acknowledges the support by the Swedish Research Council (VR), the Foundation for Strategic Research (SSF), the Swedish Energy Agency (Energimyndigheten), the European Research Council (854843-FASTCORR), eSSENCE, and StandUP. The computations/data handling was enabled by resources provided by the Swedish National Infrastructure for Computing (SNIC). Financial support from Vetenskapsrådet (Grant Nos. VR 2015-04608, VR 2016-05980, and VR 2019-05304) and the Knut and Alice Wallenberg Foundation (Grant No. 2018.0060) is acknowledged. Computations were enabled by resources provided by the Swedish National Infrastructure for Computing (SNIC) at PDC and NSC, partially funded by the Swedish Research Council through grant agreement no. 2018-05973.

PY - 2023

Y1 - 2023

N2 - Transition metal dichalcogenides (TMDs) are an emergent class of low-dimensional materials with growing applications in the field of nanoelectronics. However, efficient methods for synthesizing large monocrystals of these systems are still lacking. Here, we describe an efficient synthetic route for a large number of TMDs that were obtained in quartz glass ampoules by sulfuric vapor transport and liquid sulfur. Unlike the sublimation technique, the metal enters the gas phase in the form of molecules, hence containing a greater amount of sulfur than the growing crystal. We have investigated the physical properties for a selection of these crystals and compared them to state-of-the-art findings reported in the literature. The acquired electronic properties features demonstrate the overall high quality of single crystals grown in this work as exemplified by CoS2, ReS2, NbS2, and TaS2. This new approach to synthesize high-quality TMD single crystals can alleviate many material quality concerns and is suitable for emerging electronic devices. © 2023 The Authors. Published by American Chemical Society.

AB - Transition metal dichalcogenides (TMDs) are an emergent class of low-dimensional materials with growing applications in the field of nanoelectronics. However, efficient methods for synthesizing large monocrystals of these systems are still lacking. Here, we describe an efficient synthetic route for a large number of TMDs that were obtained in quartz glass ampoules by sulfuric vapor transport and liquid sulfur. Unlike the sublimation technique, the metal enters the gas phase in the form of molecules, hence containing a greater amount of sulfur than the growing crystal. We have investigated the physical properties for a selection of these crystals and compared them to state-of-the-art findings reported in the literature. The acquired electronic properties features demonstrate the overall high quality of single crystals grown in this work as exemplified by CoS2, ReS2, NbS2, and TaS2. This new approach to synthesize high-quality TMD single crystals can alleviate many material quality concerns and is suitable for emerging electronic devices. © 2023 The Authors. Published by American Chemical Society.

UR - http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=85151269182

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000955393900001

U2 - 10.1021/acs.cgd.2c01318

DO - 10.1021/acs.cgd.2c01318

M3 - Article

VL - 23

SP - 2287

EP - 2294

JO - Crystal Growth and Design

JF - Crystal Growth and Design

SN - 1528-7483

IS - 4

ER -

ID: 37491835