Room-Temperature Ferromagnetism in the Crystalline Semiconductor Compound Hg1 – xFexSe (x ≤ 0.06 at %) with an Ultralow Iron Impurity Concentration

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Room-Temperature Ferromagnetism in the Crystalline Semiconductor Compound Hg_{1 – x}Fe_xSe (x ≤ 0.06 at %) with an Ultralow Iron Impurity Concentration

Research output: Contribution to journal › Article › peer-review

Department of Theoretical and Mathematical Physics
Institute of Natural Sciences and Mathematics

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DOI

https://doi.org/10.3103/S1062873823702064
Final published version

T. Govorkova
V. Okulov
E. Pamyatnykh
V. Gaviko
V. Surikov

Abstract: Experiments reveal a new type of high-temperature ferromagnetism in the donor impurity electron system of Hg1 − xFexSe (х ≤ 0.06 at %) single crystals with an ultralow concentration of iron impurities at room temperature (T = 300 K). © 2023, Allerton Press, Inc.

Original language	English
Pages (from-to)	735-738
Number of pages	4
Journal	Bulletin of the Russian Academy of Sciences: Physics
Volume	87
Issue number	6
DOIs	https://doi.org/10.3103/S1062873823702064
Publication status	Published - 2023

ASJC Scopus subject areas

General Physics and Astronomy

ID: 43264221

Room-Temperature Ferromagnetism in the Crystalline Semiconductor Compound Hg1 – xFexSe (x ≤ 0.06 at %) with an Ultralow Iron Impurity Concentration

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ASJC Scopus subject areas

Room-Temperature Ferromagnetism in the Crystalline Semiconductor Compound Hg_{1 – x}Fe_xSe (x ≤ 0.06 at %) with an Ultralow Iron Impurity Concentration