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Rashba effect in inversion and accumulation InAs layers. / Radantsev, V. F.; Ivankiv, I. M.; Yafyasov, A. M.
In: Semiconductors, Vol. 37, No. 2, 01.02.2003, p. 200-206.

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Harvard

Radantsev, VF, Ivankiv, IM & Yafyasov, AM 2003, 'Rashba effect in inversion and accumulation InAs layers', Semiconductors, vol. 37, no. 2, pp. 200-206. https://doi.org/10.1134/1.1548665

APA

Radantsev, V. F., Ivankiv, I. M., & Yafyasov, A. M. (2003). Rashba effect in inversion and accumulation InAs layers. Semiconductors, 37(2), 200-206. https://doi.org/10.1134/1.1548665

Vancouver

Radantsev VF, Ivankiv IM, Yafyasov AM. Rashba effect in inversion and accumulation InAs layers. Semiconductors. 2003 Feb 1;37(2):200-206. doi: 10.1134/1.1548665

Author

Radantsev, V. F. ; Ivankiv, I. M. ; Yafyasov, A. M. / Rashba effect in inversion and accumulation InAs layers. In: Semiconductors. 2003 ; Vol. 37, No. 2. pp. 200-206.

BibTeX

@article{0be554057df24126893ec68c9fe19479,
title = "Rashba effect in inversion and accumulation InAs layers",
abstract = "Self-consistent calculations of the Rashba splitting both in inversion and accumulation InAs layers were carried out using a method based on reducing 6×6 and 8×8 Kane matrix equations to a Schr{\"o}dinger-type equation. Disregarding the Γ7-band contribution yielded a splitting magnitude overestimated by 50%. The essentially nonlinear dependence of splitting on the two-dimensional (2D) wavevector k restricts the applicability of the Rashba parameter α (coefficient at the k-linear term in the spectrum), including its value at the Fermi level, because of a strong dependence of the latter on the approximations applied to the two-dimensional spectrum. The relative differences Δn/n of the spin-split subband populations, calculated for the inversion layer, were found to be 2-3 times lower than those measured by Matsuyama et al. (see text). The experimental study of accumulation InAs layers showed that the corresponding value Δn/n does not exceed the calculated one, ∼0.02. The approach employed to describe the 2D spectrum (including spin-orbit splitting) was also shown to be adequate when applied to the case of quasi-classical quantization in a classically self-consistent surface potential.",
author = "Radantsev, {V. F.} and Ivankiv, {I. M.} and Yafyasov, {A. M.}",
note = "This study was supported by the Ministry of Education (project no. E00-3.4-278), the federal program “Russian Universities”, and the US CRDF (project REC-005).",
year = "2003",
month = feb,
day = "1",
doi = "10.1134/1.1548665",
language = "English",
volume = "37",
pages = "200--206",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

RIS

TY - JOUR

T1 - Rashba effect in inversion and accumulation InAs layers

AU - Radantsev, V. F.

AU - Ivankiv, I. M.

AU - Yafyasov, A. M.

N1 - This study was supported by the Ministry of Education (project no. E00-3.4-278), the federal program “Russian Universities”, and the US CRDF (project REC-005).

PY - 2003/2/1

Y1 - 2003/2/1

N2 - Self-consistent calculations of the Rashba splitting both in inversion and accumulation InAs layers were carried out using a method based on reducing 6×6 and 8×8 Kane matrix equations to a Schrödinger-type equation. Disregarding the Γ7-band contribution yielded a splitting magnitude overestimated by 50%. The essentially nonlinear dependence of splitting on the two-dimensional (2D) wavevector k restricts the applicability of the Rashba parameter α (coefficient at the k-linear term in the spectrum), including its value at the Fermi level, because of a strong dependence of the latter on the approximations applied to the two-dimensional spectrum. The relative differences Δn/n of the spin-split subband populations, calculated for the inversion layer, were found to be 2-3 times lower than those measured by Matsuyama et al. (see text). The experimental study of accumulation InAs layers showed that the corresponding value Δn/n does not exceed the calculated one, ∼0.02. The approach employed to describe the 2D spectrum (including spin-orbit splitting) was also shown to be adequate when applied to the case of quasi-classical quantization in a classically self-consistent surface potential.

AB - Self-consistent calculations of the Rashba splitting both in inversion and accumulation InAs layers were carried out using a method based on reducing 6×6 and 8×8 Kane matrix equations to a Schrödinger-type equation. Disregarding the Γ7-band contribution yielded a splitting magnitude overestimated by 50%. The essentially nonlinear dependence of splitting on the two-dimensional (2D) wavevector k restricts the applicability of the Rashba parameter α (coefficient at the k-linear term in the spectrum), including its value at the Fermi level, because of a strong dependence of the latter on the approximations applied to the two-dimensional spectrum. The relative differences Δn/n of the spin-split subband populations, calculated for the inversion layer, were found to be 2-3 times lower than those measured by Matsuyama et al. (see text). The experimental study of accumulation InAs layers showed that the corresponding value Δn/n does not exceed the calculated one, ∼0.02. The approach employed to describe the 2D spectrum (including spin-orbit splitting) was also shown to be adequate when applied to the case of quasi-classical quantization in a classically self-consistent surface potential.

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000180830600017

UR - http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=0037295657

U2 - 10.1134/1.1548665

DO - 10.1134/1.1548665

M3 - Article

VL - 37

SP - 200

EP - 206

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 2

ER -

ID: 44068031