Standard

Quantization of Electrical Conductance in Layered Zr/ZrO2/Au Memristive Structures. / Vokhmintsev, A.; Petrenyov, I.; Kamalov, R. et al.
In: Doklady Physical Chemistry, Vol. 513, No. 1, 01.11.2023, p. 176-180.

Research output: Contribution to journal › Article › peer-review

Harvard

Vokhmintsev, A, Petrenyov, I, Kamalov, R, Karabanalov, M, Weinstein, I & Rempel, A 2023, 'Quantization of Electrical Conductance in Layered Zr/ZrO2/Au Memristive Structures', Doklady Physical Chemistry, vol. 513, no. 1, pp. 176-180. https://doi.org/10.1134/S0012501623600262

APA

Vokhmintsev, A., Petrenyov, I., Kamalov, R., Karabanalov, M., Weinstein, I., & Rempel, A. (2023). Quantization of Electrical Conductance in Layered Zr/ZrO2/Au Memristive Structures. Doklady Physical Chemistry, 513(1), 176-180. https://doi.org/10.1134/S0012501623600262

Vancouver

Vokhmintsev A, Petrenyov I, Kamalov R, Karabanalov M, Weinstein I, Rempel A. Quantization of Electrical Conductance in Layered Zr/ZrO2/Au Memristive Structures. Doklady Physical Chemistry. 2023 Nov 1;513(1):176-180. doi: 10.1134/S0012501623600262

Author

Vokhmintsev, A. ; Petrenyov, I. ; Kamalov, R. et al. / Quantization of Electrical Conductance in Layered Zr/ZrO2/Au Memristive Structures. In: Doklady Physical Chemistry. 2023 ; Vol. 513, No. 1. pp. 176-180.

BibTeX

@article{a174976e957c4d178918a1e0917e9ab4,
title = "Quantization of Electrical Conductance in Layered Zr/ZrO2/Au Memristive Structures",
abstract = "Anodic zirconia nanotubes are a promising functional medium for the formation of non-volatile resistive memory cells. The current–voltage characteristics in the region of low conductance of the fabricated Zr/ZrO2/Au memristive structures were studied in this work. For the first time, an analysis was made of the reversible mechanisms of formation and destruction of single quantum conductors based on oxygen vacancies, which participate in processes of multiple resistive switching between low- and high-resistance states in the nanotubular dioxide layer. An equivalent electrical circuit of a parallel resistor connection was proposed and discussed to describe the observed memristive behavior of the studied layered structures.",
author = "A. Vokhmintsev and I. Petrenyov and R. Kamalov and M. Karabanalov and I. Weinstein and A. Rempel",
note = "The work was supported by the Ministry of Science and Higher Education of the Russian Federation (scientific project no. FEUZ -2023-0014).",
year = "2023",
month = nov,
day = "1",
doi = "10.1134/S0012501623600262",
language = "English",
volume = "513",
pages = "176--180",
journal = "Doklady Physical Chemistry",
issn = "0012-5016",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "1",

}

RIS

TY - JOUR

T1 - Quantization of Electrical Conductance in Layered Zr/ZrO2/Au Memristive Structures

AU - Vokhmintsev, A.

AU - Petrenyov, I.

AU - Kamalov, R.

AU - Karabanalov, M.

AU - Weinstein, I.

AU - Rempel, A.

N1 - The work was supported by the Ministry of Science and Higher Education of the Russian Federation (scientific project no. FEUZ -2023-0014).

PY - 2023/11/1

Y1 - 2023/11/1

N2 - Anodic zirconia nanotubes are a promising functional medium for the formation of non-volatile resistive memory cells. The current–voltage characteristics in the region of low conductance of the fabricated Zr/ZrO2/Au memristive structures were studied in this work. For the first time, an analysis was made of the reversible mechanisms of formation and destruction of single quantum conductors based on oxygen vacancies, which participate in processes of multiple resistive switching between low- and high-resistance states in the nanotubular dioxide layer. An equivalent electrical circuit of a parallel resistor connection was proposed and discussed to describe the observed memristive behavior of the studied layered structures.

AB - Anodic zirconia nanotubes are a promising functional medium for the formation of non-volatile resistive memory cells. The current–voltage characteristics in the region of low conductance of the fabricated Zr/ZrO2/Au memristive structures were studied in this work. For the first time, an analysis was made of the reversible mechanisms of formation and destruction of single quantum conductors based on oxygen vacancies, which participate in processes of multiple resistive switching between low- and high-resistance states in the nanotubular dioxide layer. An equivalent electrical circuit of a parallel resistor connection was proposed and discussed to describe the observed memristive behavior of the studied layered structures.

UR - http://www.scopus.com/inward/record.url?partnerID=8YFLogxK&scp=85186432954

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=001173170600002

U2 - 10.1134/S0012501623600262

DO - 10.1134/S0012501623600262

M3 - Article

VL - 513

SP - 176

EP - 180

JO - Doklady Physical Chemistry

JF - Doklady Physical Chemistry

SN - 0012-5016

IS - 1

ER -

ID: 53743736