On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon › Research Explorer

On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1134/S1063782622040030
Final published version

P. V. Seredin
Ali Obaid Radam
D. L. Goloshchapov
A. S. Len’shin
N. S. Buylov
K. A. Barkov
D. N. Nesterov
A. M. Mizerov
S. N. Timoshnev
E. V. Nikitina
I. N. Arsentyev
Sh Sharafidinov
S. A. Kukushkin
I. A. Kasatkin

Original language	English
Pages (from-to)	253-258
Number of pages	6
Journal	Semiconductors
Volume	56
Issue number	4
DOIs	https://doi.org/10.1134/S1063782622040030
Publication status	Published - Apr 2022

WoS ResearchAreas Categories

Physics, Condensed Matter

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Level of Research Output

VAK List

Research areas

AlGaN, GaN, MBE, porSi

GRNTI

29.00.00 PHYSICS

ID: 30625740