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Electron-electron interaction and the universality of critical indices for quantum Hall effect plateau-plateau transitions in n-InGaAs/GaAs nanostructures with double quantum wells. / Arapov, Yu. G.; Gudina, S. V.; Klepikova, A. S. et al.
In: Semiconductors, Vol. 49, No. 2, 02.2015, p. 181-186.

Research output: Contribution to journal › Article › peer-review

Harvard

Arapov, YG, Gudina, SV, Klepikova, AS, Neverov, VN, Shelushinina, NG & Yakunin, MV 2015, 'Electron-electron interaction and the universality of critical indices for quantum Hall effect plateau-plateau transitions in n-InGaAs/GaAs nanostructures with double quantum wells', Semiconductors, vol. 49, no. 2, pp. 181-186. https://doi.org/10.1134/S1063782615020037

APA

Arapov, Y. G., Gudina, S. V., Klepikova, A. S., Neverov, V. N., Shelushinina, N. G., & Yakunin, M. V. (2015). Electron-electron interaction and the universality of critical indices for quantum Hall effect plateau-plateau transitions in n-InGaAs/GaAs nanostructures with double quantum wells. Semiconductors, 49(2), 181-186. https://doi.org/10.1134/S1063782615020037

Vancouver

Arapov YG, Gudina SV, Klepikova AS, Neverov VN, Shelushinina NG, Yakunin MV. Electron-electron interaction and the universality of critical indices for quantum Hall effect plateau-plateau transitions in n-InGaAs/GaAs nanostructures with double quantum wells. Semiconductors. 2015 Feb;49(2):181-186. doi: 10.1134/S1063782615020037

Author

Arapov, Yu. G. ; Gudina, S. V. ; Klepikova, A. S. et al. / Electron-electron interaction and the universality of critical indices for quantum Hall effect plateau-plateau transitions in n-InGaAs/GaAs nanostructures with double quantum wells. In: Semiconductors. 2015 ; Vol. 49, No. 2. pp. 181-186.

BibTeX

@article{69cec7f9fec84805bee1f546323e2812,
title = "Electron-electron interaction and the universality of critical indices for quantum Hall effect plateau-plateau transitions in n-InGaAs/GaAs nanostructures with double quantum wells",
keywords = "REGIME, MAGNETOTRANSPORT, INSULATOR",
author = "Arapov, {Yu. G.} and Gudina, {S. V.} and Klepikova, {A. S.} and Neverov, {V. N.} and Shelushinina, {N. G.} and Yakunin, {M. V.}",
year = "2015",
month = feb,
doi = "10.1134/S1063782615020037",
language = "English",
volume = "49",
pages = "181--186",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

RIS

TY - JOUR

T1 - Electron-electron interaction and the universality of critical indices for quantum Hall effect plateau-plateau transitions in n-InGaAs/GaAs nanostructures with double quantum wells

AU - Arapov, Yu. G.

AU - Gudina, S. V.

AU - Klepikova, A. S.

AU - Neverov, V. N.

AU - Shelushinina, N. G.

AU - Yakunin, M. V.

PY - 2015/2

Y1 - 2015/2

KW - REGIME

KW - MAGNETOTRANSPORT

KW - INSULATOR

UR - http://www.scopus.com/inward/record.url?scp=84923793431&partnerID=8YFLogxK

UR - http://elibrary.ru/item.asp?id=24010672

UR - https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=tsmetrics&SrcApp=tsm_test&DestApp=WOS_CPL&DestLinkType=FullRecord&KeyUT=000349445400009

U2 - 10.1134/S1063782615020037

DO - 10.1134/S1063782615020037

M3 - Article

AN - SCOPUS:84923793431

VL - 49

SP - 181

EP - 186

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 2

ER -

ID: 364794