• E. Baranova
  • V. L. Kobelev
  • O. L. Kobeleva
  • N. V. Melnikova
  • V. B. Zlokazov
  • L. Ya. Kobelev
  • M. V. Perfiliev
The temperature dependencies of the electrical conductivity and dielectric permittivity of (BS)1-x(DAsS2)x (B = Ge, Pb; D = Ag, Cu) were investigated by means of impedance measurements in the frequency range between 10-2 and 10-5 Hz and at temperatures between 78 and 500 K. In all chalcogenides, ionic conductivity (Ag+ or Cu+) was found. The onset of ionic transport was found at 115-120 K for AgGeAsS3 and 110-115 K for CuGeAsS3. The complex impedance and admittance plots, the electrical properties and the X-ray structure data are given.
Original languageEnglish
Pages (from-to)255-261
Number of pages7
JournalSolid State Ionics
Volume124
Issue number3-4
DOIs
Publication statusPublished - 2 Sept 1999

    ASJC Scopus subject areas

  • Condensed Matter Physics
  • General Chemistry
  • General Materials Science

ID: 53419351